Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures
| dc.contributor.author | Ngoepe, Phuti Ngako Mahloka | |
| dc.contributor.author | Meyer, Walter Ernst | |
| dc.contributor.author | Diale, M. (Mmantsae Moche) | |
| dc.contributor.author | Auret, Francois Danie | |
| dc.contributor.author | Van Schalkwyk, Louwrens | |
| dc.contributor.email | phuti.ngoepe@up.ac.za | en_US |
| dc.date.accessioned | 2012-06-12T06:09:34Z | |
| dc.date.available | 2012-06-12T06:09:34Z | |
| dc.date.issued | 2012-06 | |
| dc.description.abstract | Please read abstract in the article. | en_US |
| dc.description.librarian | nf2012 | en |
| dc.description.uri | http://www.elsevier.com/locate/physb | en_US |
| dc.identifier.citation | P.N.M. Ngoepe, W.E. Meyer, M. Diale, F.D. Auret, L.van Schalkwyk, Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures, Physica B, vol. 407, no. 10, pp. 1628-1630 (2012), doi: 10.1016/j.physb.2011.09.102 | en |
| dc.identifier.issn | 0921-4526 (print) | |
| dc.identifier.issn | 1873-2135 (online) | |
| dc.identifier.other | 10.1016/j.physb.2011.09.102 | |
| dc.identifier.uri | http://hdl.handle.net/2263/19144 | |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | © 2011 Elsevier B.V. All rights reserved. | en_US |
| dc.subject | Annealing | en |
| dc.subject | Schottky photodiodes | en |
| dc.subject | AlGaN | en |
| dc.subject.lcsh | Photodiodes | en |
| dc.subject.lcsh | Optoelectronics | en |
| dc.title | Optoelectronic characterization of Au/Ni/n-AIGaN photodiodes after annealing at different temperatures | en |
| dc.type | Postprint Article | en |