Theoretical investigation of the stability of crystalline silicon dicarbide

dc.contributor.authorAndrew, Richard Charles
dc.contributor.authorBraun, Max Willi Hermann
dc.contributor.authorChetty, Nithaya
dc.contributor.emailRichard.Andrew@up.ac.za; Max.Braun@up.ac.za; Nithaya.Chetty@up.ac.zaen_US
dc.date.accessioned2012-04-13T06:56:25Z
dc.date.available2012-04-13T06:56:25Z
dc.date.issued2012-04
dc.description.abstractWhile Si, C and SiC are very well known materials that have been extensively studied in their multitude of structures and allotropes, there is, surprisingly, a dearth of reliable information for off-50:50 compounds involving Si and C. Do such compounds exist and, if so, what are the plausible structures for these compounds? Using first principles total energy methods, we generally explore these questions before investigating in some detail the structures involving silicon dicarbide. Of the structures considered, our results show that the tetragonal glitter phase is lowest in energy. Of the two higher energy cubic structures that we considered, we note that there is a continuous transition from the high energy fluorite structure to the lower energy pyrite structure. We predict the transition pressure from glitter to pyrite to be 24.7 GPa. We give detailed structural and electronic properties for these systems. Since diamond and SiC are known for their hardness properties, we compute the elastic properties of SiC2, and we make an assessment of its hardness properties. We propose the glitter structure to be a plausible phase for SiC2.en
dc.description.librariannf2012en
dc.description.sponsorshipNational Institute for Theoretical Physicsen_US
dc.description.urihttp://www.elsevier.com/locate/commatscien_US
dc.identifier.citationAndrew, RC, Braun, M & Chetty, N 2012, 'A theoretical investigation of the stability of crystalline silicon dicarbide', Computational Materials Science, vol. 55, pp. 186-191 (2012), doi:10.1016/j.commatsci.2011.10.040en
dc.identifier.issn0927-0256 (print)
dc.identifier.issn1879-0801 (online)
dc.identifier.other10.1016/j.commatsci.2011.10.040
dc.identifier.urihttp://hdl.handle.net/2263/18554
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rights© 2011 Elsevier. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Computational Materials Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Computational Materials Science, vol. 55, 2012, 10.1016/j.commatsci.2011.10.040.en
dc.subjectSilicon dicarbideen
dc.subjectElastic modulusen
dc.subjectPhase transitionsen
dc.subjectCrystal structuresen
dc.subject.lcshPhase transformations (Statistical physics)en
dc.subject.lcshAlloys -- Stabilityen
dc.titleTheoretical investigation of the stability of crystalline silicon dicarbideen
dc.typePostprint Articleen

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