The carbon-substitutional-carbon-interstitial (CsCi) defect pair in silicon from hybrid functional calculations

dc.contributor.authorOuma, C.N.M.
dc.contributor.authorMeyer, Walter Ernst
dc.date.accessioned2016-06-14T07:11:44Z
dc.date.issued2016-06
dc.description.abstractUsing both the Perdew–Burke–Ernzerhof (PBE) functional and the hybrid functional of Heyd–Scuseria– Ernzerhof (HSE06), the metastability of the carbon-substitutional–carbon-interstitial (CsCi) defect in silicon has been investigated within density functional theory using the two experimentally proposed configurations of the defect. While the PBE functional predicted the defect complex to have both donor and acceptor levels, it did not predict any form of charge-state controlled metastability as was observed experimentally. In the case of HSE06 functional, the defect was found to exhibit charge-state controlled metastability in the 0 and 1 charge states with no metastability predicted for +1 charge state. The calculated binding energies for the neutral charge state indicate that the defect is a stable bound defect complex.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2017-06-30
dc.description.librarianhb2016en_ZA
dc.description.sponsorshipNational Research Foundation of South Africa.en_ZA
dc.description.urihttp://www.elsevier.com/locate/com/matscien_ZA
dc.identifier.citationOuma, CNM & Meyer, WE 2016, 'The carbon-substitutional-carbon-interstitial (CsCi) defect pair in silicon from hybrid functional calculations', Computational Materials Science, vol. 118, pp. 228-241.en_ZA
dc.identifier.issn0927-0256 (print)
dc.identifier.issn1879-0801 (online)
dc.identifier.other10.1016/j.commatsci.2016.03.033
dc.identifier.urihttp://hdl.handle.net/2263/53099
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2016 Elsevier. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Computational Materials Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Computational Materials Science, vol. 118, pp. 228-241, 2016. doi : 10.1016/j.commatsci.2016.03.033.en_ZA
dc.subjectCarbon-substitutional–carbon-interstitial (CsCi)en_ZA
dc.subjectSiliconen_ZA
dc.subjectDefectsen_ZA
dc.subjectSemiconductorsen_ZA
dc.subjectMetastabilityen_ZA
dc.subjectDensity functional theory (DFT)en_ZA
dc.titleThe carbon-substitutional-carbon-interstitial (CsCi) defect pair in silicon from hybrid functional calculationsen_ZA
dc.typePostprint Articleen_ZA

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