Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC

dc.contributor.authorTunhuma, Shandirai Malven
dc.contributor.authorAuret, Francois Danie
dc.contributor.authorLegodi, Matshisa Johannes
dc.contributor.authorDiale, M. (Mmantsae Moche)
dc.contributor.emailu13259394@tuks.co.zaen_ZA
dc.date.accessioned2018-04-18T12:32:44Z
dc.date.issued2018-07
dc.description.abstractWe have studied the defects introduced in n-type 4H-SiC during sputter deposition of tungsten using deep-level transient spectroscopy (DLTS). Current-voltage and capacitance-voltage measurements showed a deterioration of diode thermionic emission characteristics due to the sputter deposition. Two electrically active defects E0.29 and E0.69 were introduced. Depth profiling revealed that sputter deposition increases the concentration of the native Z1 defect. A comparison with prominent irradiation and process induced defects showed that the E0.29 was unique and introduced during sputter deposition only. The E0.69 may be silicon vacancy related defect.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2019-07-01
dc.description.librarianhj2018en_ZA
dc.description.sponsorshipThe South African National Research Foundation and the University of Pretoria.en_ZA
dc.description.urihttp://www.elsevier.com/locate/msspen_ZA
dc.identifier.citationTunhuma, S.M., Auret, F.D., Legodi, M.J. et al. 2018, 'Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC', Materials Science in Semiconductor Processing, vol. 81, pp. 122-126.en_ZA
dc.identifier.issn1369-8001 (print)
dc.identifier.issn1873-4081 (online)
dc.identifier.other10.1016/j.mssp.2018.03.021
dc.identifier.urihttp://hdl.handle.net/2263/64600
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2018 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol. 81, pp. 122-126, 2018. doi : 10.1016/j.mssp.2018.03.021.en_ZA
dc.subjectDeep-level transient spectroscopy (DLTS)en_ZA
dc.subjectSputter depositionen_ZA
dc.subjectIrradiationen_ZA
dc.subjectDefectsen_ZA
dc.subjectSilicon vacanciesen_ZA
dc.subjectInduced defectsen_ZA
dc.subjectEmission characteristicsen_ZA
dc.subjectElectrically active defectsen_ZA
dc.subjectElectrical characterizationen_ZA
dc.subjectCurrent voltageen_ZA
dc.subjectCapacitance voltage measurementsen_ZA
dc.subjectTungstenen_ZA
dc.subjectThermionic emissionen_ZA
dc.subjectSilicon compoundsen_ZA
dc.subjectSilicon carbideen_ZA
dc.subjectDepth profilingen_ZA
dc.subjectDepositionen_ZA
dc.subjectCapacitanceen_ZA
dc.titleElectrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiCen_ZA
dc.typePostprint Articleen_ZA

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