Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon
dc.contributor.author | Abdurrazaq, Abdulgaffar | |
dc.contributor.author | Meyer, Walter Ernst | |
dc.contributor.email | a.abdurrazaq@up.ac.za | en_ZA |
dc.date.accessioned | 2020-03-25T11:35:09Z | |
dc.date.available | 2020-03-25T11:35:09Z | |
dc.date.issued | 2019-11 | |
dc.description.abstract | Please read abstract in the article. | en_ZA |
dc.description.department | Physics | en_ZA |
dc.description.librarian | hj2020 | en_ZA |
dc.description.sponsorship | The National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961). | en_ZA |
dc.description.uri | http://www.elsevier.com/locate/physb | en_ZA |
dc.identifier.citation | Abdurrazaq, A. & Meyer, W.E. 2019, 'Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon', Physica B: Condensed Matter, vol. 572, pp. 238-241. | en_ZA |
dc.identifier.issn | 0921-4526 (print) | |
dc.identifier.issn | 1873-2135 (online) | |
dc.identifier.other | 10.1016/j.physb.2019.08.012 | |
dc.identifier.uri | http://hdl.handle.net/2263/73831 | |
dc.language.iso | en | en_ZA |
dc.publisher | Elsevier | en_ZA |
dc.rights | © 2019 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Physica B: Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Physica B: Condensed Matter, vol. 572, pp. 238-241, 2019. doi : 10.1016/j.physb.2019.08.012. | en_ZA |
dc.subject | Density functional theory (DFT) | en_ZA |
dc.subject | Defect level | en_ZA |
dc.subject | Binding energy | en_ZA |
dc.subject | Charge states | en_ZA |
dc.subject | Defect complexes | en_ZA |
dc.subject | Formation energy | en_ZA |
dc.title | Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon | en_ZA |
dc.type | Preprint Article | en_ZA |