Influence of recombination on the thermal conduction in bipolar semiconductors and semiconductor structures

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Authors

Gurevich, Y.G.
Lashkevych, I.

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International Conference on Heat Transfer, Fluid Mechanics and Thermodynamics

Abstract

Paper presented to the 10th International Conference on Heat Transfer, Fluid Mechanics and Thermodynamics, Florida, 14-16 July 2014.
It is investigated the influence of recombination on the energy flux in bipolar semiconductors. The expression for energy flux in a nondegenerate semiconductor in a linear approximation with respect to perturbation in a quasi-neutral approximation taking into account recombination (the presence of nonequilibrium charge carriers in the semiconductor) has been obtained. In a one-dimension case when the different temperatures from the both sides of the semiconductor have been considered the energy flux density has been calculated in two different cases: the case of weak recombination and the case of strong recombination.

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Keywords

Bipolar semiconductors, Semiconductor structures, Recombination, Thermal conduction, Energy flux, Quasi-neutral approximation

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Citation

Gurevich, YG, Lashkevych, I 2014, 'Influence of recombination on the thermal conduction in bipolar semiconductors and semiconductor structures', Paper presented to the 10th International Conference on Heat Transfer, Fluid Mechanics and Thermodynamics, Florida, 14-16 July 2014.