Numerical simulation and analysis of process parameters of gan-metal organic chemical vapor deposition reactor

Abstract

In this work, the GaN-MOCVD reactor with vertical spray structure is simulated, and a numerical solution to the steady flow in low pressure with substrate axisymmetrical rotating is obtained by the computational fluid dynamics software. The temperature field, flow field, operating pressure, rotation speed of substrate are analyzed, and process conditions are optimized which can make the flow field in reactor more stable to ensure the thickness uniformity of deposited thin film. This paper not only provides an effective solution for high-quality epitaxial growth, but also provides a theoretical basis for the follow-up experiment and equipment improvement.