Spin-polarized electron transfer in multilayers with different types of rough interfaces

Abstract

In this study, the influence of interfacial roughness of multilayers structures on spin filter tunneling is investigated at low biases as a function of interfacial roughness type. The results show that the roughness causes the reduction of resonant tunneling, maximum achievable tunneling magneto resistance (TMR), and spin-filtering efficiency of tunneling structures. Based on the numerical results, decreasing the electronic devices’ efficiency is straight related to roughening of interfacial. Additionally, the effect of different temperatures is investigated on the spin polarization (SP). The values of SP decreased sensibly by increasing the temperature.