The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

dc.contributor.authorTunhuma, Shandirai Malven
dc.contributor.authorAuret, Francois Danie
dc.contributor.authorLegodi, Matshisa Johannes
dc.contributor.authorDiale, M. (Mmantsae Moche)
dc.contributor.emailmmantsae.diale@up.ac.zaen_ZA
dc.date.accessioned2016-11-30T06:19:04Z
dc.date.issued2016-01
dc.description.abstractIn this study, the current–voltage (I–V) and capacitance–voltage (C–V) characteristics of Au/n-GaAs Schottky diodes have been measured over a wide temperature range, 80–480 K. The diodes were rectifying throughout the range and showed good thermal stability. Room temperature values for the ideality factor, I–V barrier height and C–V barrier height were found to be n =1.10, ϕIVϕIV=0.85 eV and ϕCVϕCV=0.96 eV, respectively. ϕIVϕIV increases and n decreases with an increase in temperature. We investigated the effect of elevated temperatures on the barrier height and ideality factor by measuring the diodes at a high temperature (annealing mode) then immediately afterwards measuring at room temperature (post annealing mode). The measurements indicate I–V characteristics that degrade permanently above 300 K. Permanent changes to the C–V characteristics were observed only above 400 K. We also noted a discrepancy in the C–V barrier height and carrier concentration between 340 and 400 K, which we attribute to the influence of the EL2 defect (positioned 0.83 eV below the conduction band minima) on the free carrier density. Consequently, we were able to fit the ϕCVϕCV versus temperature curve into two regions with temperature coefficients −6.9×10−4 eV/K and −2.2×10−4 eV/K above and below 400 K.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.embargo2017-01-31
dc.description.librarianhb2016en_ZA
dc.description.sponsorshipThe University of Pretoria and the South African National Research Foundation grant#88021.en_ZA
dc.description.urihttp://www.journals.elsevier.com/physica-b-condensed-matteren_ZA
dc.identifier.citationTunhuma, SM, Auret, FD, Legodi, MJ & Diale, M 2016, 'The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes', Physica B: Condensed Matter, vol. 480, pp. 201-205.en_ZA
dc.identifier.issn0921-4526 (print)
dc.identifier.issn1873-2135 (online)
dc.identifier.other/10.1016/j.physb.2015.08.016
dc.identifier.urihttp://hdl.handle.net/2263/58315
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2015 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Physica B: Consensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Physica B: Consensed Matter, vol. 480, pp. 201-205, 2016. doi : /10.1016/j.physb.2015.08.016.en_ZA
dc.subjectBarrier heighten_ZA
dc.subjectAnnealingen_ZA
dc.subjectGaAsen_ZA
dc.subjectEL2 defecten_ZA
dc.subjectCurrent–voltage (I–V)en_ZA
dc.subjectCapacitance–voltage (C–V)en_ZA
dc.subjectDeep-level transient spectroscopy (DLTS)en_ZA
dc.subjectLaplace deep-level transient spectroscopy (L-DLTS)en_ZA
dc.titleThe effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodesen_ZA
dc.typePostprint Articleen_ZA

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