The migration behaviour of xenon implanted into glassy carbon

Abstract

This study is in two parts. Both parts are geared towards the study of the effectiveness of glassy carbon as a good storage material was investigated. Firstly, 200 keV Xe ions were implanted into glassy carbon substrates to a fluence of 1×1016 ions/cm2 at room temperature. Also, we have also investigated the effect of SHI irradiation on Xe as-implanted samples at a fluence of 1×1014 ions/cm2. After implantation and swift heavy ion irradiation, the samples were investigated using several techniques. This was with a view to characterizing the level of damage created by the ion bombardment, the distributions of the Xe ions in glassy carbon and the effect of SHI irradiation on these distributions. The irradiated and un-irradiated but implanted with Xe samples were isochronally annealed in a vacuum in steps of 100 C for 5 hours at temperatures ranging from 300 C – 800 C and 900 C – 1500 C, respectively.