Hydrogen kinetics in a-Si:H and a-SiC:H thin films investigated by real-time ERD
| dc.contributor.author | Halindintwali, S. | |
| dc.contributor.author | Khoele, J. | |
| dc.contributor.author | Nemroaui, O. | |
| dc.contributor.author | Comrie, C.M. | |
| dc.contributor.author | Theron, C.C. (Chris) | |
| dc.date.accessioned | 2015-03-26T09:18:12Z | |
| dc.date.available | 2015-03-26T09:18:12Z | |
| dc.date.issued | 2015-04 | |
| dc.description.abstract | Hydrogen effusion from hydrogenated amorphous silicon (a-Si:H) and amorphous silicon carbide (a-Si1 xCx:H) thin films during a temperature ramp between RT and 600 C was studied by in situ realtime elastic recoil detection analysis. Point to point contour maps show the hydrogen depth profile and its evolution with the ramped temperature. This paper proposes a diffusion limited evolution model to study H kinetic properties from total retained H contents recorded in a single ramp. In a compact a-Si:H layer where H predominantly effuses at high temperatures between 500 and 600 C, an activation energy value of 1.50 eV and a diffusion pre-factor of 0.41 10 4 cm2/s were obtained. Applied to an non-stoichiometric a-Si1 xCx:H film in the same range of temperature, the model led to reduced values of activation energy and diffusion prefactor of 0.33 eV and 0.59 10 11 cm2/s, respectively. | en_ZA |
| dc.description.librarian | hb2015 | en_ZA |
| dc.description.sponsorship | National Research Foundation of South Africa (Grant specific unique reference number (UID) 85961). | en_ZA |
| dc.description.uri | http://www.elsevier.com/locate/nimb | en_ZA |
| dc.identifier.citation | Halindintwali, S, Khoele, J, Nemroaui, O, Comrie, CM & Theron, CC 2015, 'Hydrogen kinetics in a-Si:H and a-SiC:H thin films investigated by real-time ERD', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 349, pp. 85-89. | en_ZA |
| dc.identifier.issn | 0168-583X (print) | |
| dc.identifier.issn | 1872-9584 (online) | |
| dc.identifier.other | 10.1016/j.nimb.2015.02.040 | |
| dc.identifier.uri | http://hdl.handle.net/2263/44180 | |
| dc.language.iso | en | en_ZA |
| dc.publisher | Elsevier | en_ZA |
| dc.rights | © 2015 Published by Elsevier B.V. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. A. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 349, pp. 85-89, 2015. doi : 10.1016/j.nimb.2015.02.040. | en_ZA |
| dc.subject | Kinetic property | en_ZA |
| dc.subject | Activation energy | en_ZA |
| dc.subject | Stoichiometric | en_ZA |
| dc.subject | Depth profile | en_ZA |
| dc.subject | Arrhenius plot | en_ZA |
| dc.title | Hydrogen kinetics in a-Si:H and a-SiC:H thin films investigated by real-time ERD | en_ZA |
| dc.type | Postprint Article | en_ZA |