Long range annealing of defects in germanium by low energy plasma ions

dc.contributor.authorArchilla, J.F.R.
dc.contributor.authorCoelho, Sergio M.M.
dc.contributor.authorAuret, Francois Danie
dc.contributor.authorDubinko, V.I.
dc.contributor.authorHizhnyakov, V.
dc.date.accessioned2015-02-16T12:27:39Z
dc.date.available2015-02-16T12:27:39Z
dc.date.issued2015-03
dc.description.abstractIons arriving at a semiconductor surface with very low energy (2–8 eV) are interacting with defects deep inside the semiconductor. Several different defects were removed or modified in Sb-doped germanium, of which the EE-center has the highest concentration. The low fluence and low energy of the plasma ions imply that the energy has to be able to travel in a localized way to be able to interact with defects up to a few microns below the semiconductor surface. After eliminating other possibilities (electric field, light, heat) we now conclude that moving intrinsic localized modes (ILMs), as a mechanism of long-distance energy transport, are the most likely cause. This would be striking evidence of the importance of ILMs in crystals and opens the way to further experiments to probe ILM properties both in semiconductors and in the metals used for contacts. Although most of the measurements have been performed on germanium, similar effects have been found in silicon.en_ZA
dc.description.librarianhj2015en_ZA
dc.description.sponsorshipMICINN, project FIS2008-04848; the South African National Research Foundation and the European Regional Development Fund, project 3.2.0101.11-0029, Centre of Excellence Mesosystems: Theory and Applications.en_ZA
dc.description.urihttp://www.elsevier.com/locate/physden_ZA
dc.identifier.citationArchilla, JFR, Coelho, SMM, Auret, FD, Dubinko, VI & Hizhnyakov, V 2015, 'Long range annealing of defects in germanium by low energy plasma ions', Physica D : Nonlinear Phenomena, vol. 297, pp. 56-61.en_ZA
dc.identifier.issn0167-2789 (print)
dc.identifier.issn1872-8022 (online)
dc.identifier.other10.1016/j.physd.2015.01.001
dc.identifier.urihttp://hdl.handle.net/2263/43660
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2015 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Physica D : Nonlinear Phenomena. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica D : Nonlinear Phenomena, vol. 297, pp. 56-61, 2015. doi : 10.1016/j.physd.2015.01.001en_ZA
dc.subjectGermaniumen_ZA
dc.subjectIntrinsic localized mode (ILM)en_ZA
dc.subjectDiscrete breathersen_ZA
dc.subjectQuodonsen_ZA
dc.subjectDefectsen_ZA
dc.subjectDeep level transient spectroscopy (DLTS)en_ZA
dc.titleLong range annealing of defects in germanium by low energy plasma ionsen_ZA
dc.typePostprint Articleen_ZA

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