Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS

dc.contributor.authorMtangi, Wilbert
dc.contributor.authorAuret, Francois Danie
dc.contributor.authorDiale, M. (Mmantsae Moche)
dc.contributor.authorCoelho, Sergio M.M.
dc.contributor.authorLegodi, Matshisa Johannes
dc.contributor.authorJanse van Rensburg, Pieter Johan
dc.contributor.authorNel, Jacqueline Margot
dc.date.accessioned2013-02-01T08:38:51Z
dc.date.available2013-02-01T08:38:51Z
dc.date.issued2012-05-03
dc.description.abstractEffects of annealing ZnO in hydrogen, oxygen, and argon have been investigated using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) measurements. Current-voltage (IV) measurements indicate a decrease in zero–bias barrier height for all the annealed samples. Conventional DLTS measurements reveal the presence of three prominent peaks in the un-annealed and annealed samples. A new peak with an activation enthalpy of 0.60 eV has been observed in the H2 annealed samples, while an estimated energy level of 0.67 eV has been observed in Ar annealed samples. O2 annealing does not introduce new peaks but causes a decrease in the concentration of the E3 peak and an increase in concentration of the E1 peak. The concentrations of all the intrinsic defects have decreased after H2 and Ar annealing; with Ar annealing giving peaks with the lowest concentrations. The E2 peak anneals out after annealing ZnO in Ar and H2 at 300 C. From the annealing behaviour of E3, we have attributed to transition metal ion related defects, while E4 has been explained as a defect, whose formation favours oxygen deficient conditions. Laplace DLTS has successfully been employed to resolve the closely spaced energy levels in the E4 peak, splitting it into three peaks with energy levels, 0.68 eV, 0.58 eV, and 0.50 eV below the minimum of the conduction band for the Ar annealed sample.en_US
dc.description.librarianam2013en_US
dc.description.sponsorshipWe would like to thank the South African National Research Foundation (NRF) for financial support. The Laplace DLTS software and hardware used in the research was kindly provided by A. R. Peaker (Centre for electronic Materials Devices and Nanostructures, University of Manchester) and L. Dobaczewski (Institute of Physics, Polish Academy of Sciences).en_US
dc.description.urihttp://jap.aip.org/en_US
dc.identifier.citationMtangi, W, Auret, FD, Meyer, WE, Legodi, MJ, Janse van Rensburg, PJ, Coelho, SMM, Diale, M & Nel, JM 2012, 'Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS', Journal of Applied Physics, vol. 111, no. 9, pp.en_US
dc.identifier.issn0021-8979 (print)
dc.identifier.issn1089--7550 (online)
dc.identifier.other10.1063/1.4709728
dc.identifier.urihttp://hdl.handle.net/2263/20928
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights© 2012 American Institute of Physicsen_US
dc.subjectOxygenen_US
dc.titleEffects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTSen_US
dc.typeArticleen_US

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