Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structure

dc.contributor.authorKunert, Herbert W.
dc.contributor.authorMachatine, Augusto Gonçalo Jose
dc.contributor.authorMalherbe, Johan B.
dc.contributor.authorBarnas, J.
dc.contributor.authorHoffmann, A.
dc.contributor.authorWagner, M.R.
dc.date.accessioned2009-01-20T06:35:27Z
dc.date.available2009-01-20T06:35:27Z
dc.date.issued2008
dc.description.abstractWe have examined the effect of Time Reversal Symmetry (TRS) on vibrational modes and on the electronic band structure of Si and Ge. Most of the primary non-interacting modes are not affected by TRS. Only phonons originating from high symmetry lines S and A of the Brillouin Zone (BZ) indicate extra degeneracy. Selection rules for some two and three phonons originating from high symmetry lines are determined. The states of electrons and holes described by electronic band structure due to spin-inclusion are assigned by spinor representations of the double space group. Inclusion of the TRS into the band structure results in extra degeneracy of electrons and holes, and therefore optical selection rules suppose to be modified.en_US
dc.identifier.citationKunert, HW, Machatine, AGJ, Malherbe, JB, Barnas, J, Hoffmann, A & Wagner, MR 2008, ‘Infrared absorption, multiphonon processes and time reversal effect on Si and Ge band structure’, Thin Solid Films, vol. 517, no. 1, pp. 134–136. [http://www.elsevier.com/locate/tsf]en_US
dc.identifier.issn0040-6090
dc.identifier.other10.1016/j.tsf.2008.08.033
dc.identifier.urihttp://hdl.handle.net/2263/8633
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.rightsElsevieren_US
dc.subjectInfrared absorptionen_US
dc.subjectTime reversalen_US
dc.subjectPhononsen_US
dc.subjectSpace groupsen_US
dc.subjectSelection rulesen_US
dc.subjectSien_US
dc.subjectGeen_US
dc.subject.lcshPhonons
dc.subject.lcshTime reversal
dc.subject.lcshBrillouin zones
dc.subject.lcshElectrons
dc.subject.lcshSpinor analysis
dc.titleInfrared absorption, multiphonon processes and time reversal effect on Si and Ge band structureen_US
dc.typePostprint Articleen_US

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