Ti- and Fe-related charge transition levels in beta-Ga2O3
dc.contributor.author | Zimmermann, Christian | |
dc.contributor.author | Frodason, Ymir Kalmann | |
dc.contributor.author | Barnard, Abraham Willem | |
dc.contributor.author | Varley, Joel Basile | |
dc.contributor.author | Irmscher, Klaus | |
dc.contributor.author | Galazka, Zbigniew | |
dc.contributor.author | Karjalainen, Antti | |
dc.contributor.author | Meyer, Walter Ernst | |
dc.contributor.author | Auret, Francois Danie | |
dc.contributor.author | Vines, Lasse | |
dc.date.accessioned | 2020-09-30T06:49:43Z | |
dc.date.available | 2020-09-30T06:49:43Z | |
dc.date.issued | 2020-02-18 | |
dc.description.abstract | Deep-level transient spectroscopy measurements on b-Ga2O3 crystals reveal the presence of three defect signatures labeled E2a; E2b, and E3 with activation energies at around 0.66 eV, 0.73 eV, and 0.95 eV below the conduction band edge. Using secondary ion mass spectrometry, a correlation between the defect concentration associated with E3 and the Ti concentration present in the samples was found. Particularly, it is found that E3 is the dominant Ti-related defect in b-Ga2O3 and is associated with a single Ti atom. This finding is further corroborated by hybrid functional calculations that predict Ti substituting on an octahedral Ga site, denoted as TiGaII, to be a good candidate for E3. Moreover, the deep level transient spectroscopy results show that the level previously labeled E2 and attributed to Fe substituting on a gallium site (FeGa) consists of two overlapping signatures labeled E2a and E2b. We tentatively assign E2a and E2b to Fe substituting for Ga on a tetrahedral or an octahedral site, respectively. | en_ZA |
dc.description.department | Physics | en_ZA |
dc.description.librarian | am2020 | en_ZA |
dc.description.sponsorship | The Research Council of Norway through the FUNDAMENT project (Project No. 251131), the Norwegian Micro- and Nano-Fabrication Facility (NorFab, Project No. 245963), the Faculty of Mathematics and Natural Sciences at the University of Oslo via the strategic research initiative FOXHOUND, and the Norwegian nano-network. | en_ZA |
dc.description.uri | http://scitation.aip.org/content/aip/journal/apl | en_ZA |
dc.identifier.citation | Zimmermann, C., Frodason, Y.K., Barnard, A.W. et al. Ti- and Fe-related charge transition levels in beta-Ga2O3. Applied Physics Letters 116, 072101 (2020); https://DOI.org/10.1063/1.5139402. | en_ZA |
dc.identifier.issn | 0003-6951 (print) | |
dc.identifier.issn | 1077-3118 (online) | |
dc.identifier.other | 10.1063/1.5139402 | |
dc.identifier.uri | http://hdl.handle.net/2263/76276 | |
dc.language.iso | en | en_ZA |
dc.publisher | American Institute of Physics | en_ZA |
dc.rights | © 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. | en_ZA |
dc.subject | Ti concentration | en_ZA |
dc.subject | E3 | en_ZA |
dc.subject | Ti substituting | en_ZA |
dc.subject | Ti atom | en_ZA |
dc.subject | Deep-level transient spectroscopy (DLTS) | en_ZA |
dc.subject | Beta-Ga2O3 | en_ZA |
dc.title | Ti- and Fe-related charge transition levels in beta-Ga2O3 | en_ZA |
dc.type | Article | en_ZA |