Ti- and Fe-related charge transition levels in beta-Ga2O3

dc.contributor.authorZimmermann, Christian
dc.contributor.authorFrodason, Ymir Kalmann
dc.contributor.authorBarnard, Abraham Willem
dc.contributor.authorVarley, Joel Basile
dc.contributor.authorIrmscher, Klaus
dc.contributor.authorGalazka, Zbigniew
dc.contributor.authorKarjalainen, Antti
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.authorAuret, Francois Danie
dc.contributor.authorVines, Lasse
dc.date.accessioned2020-09-30T06:49:43Z
dc.date.available2020-09-30T06:49:43Z
dc.date.issued2020-02-18
dc.description.abstractDeep-level transient spectroscopy measurements on b-Ga2O3 crystals reveal the presence of three defect signatures labeled E2a; E2b, and E3 with activation energies at around 0.66 eV, 0.73 eV, and 0.95 eV below the conduction band edge. Using secondary ion mass spectrometry, a correlation between the defect concentration associated with E3 and the Ti concentration present in the samples was found. Particularly, it is found that E3 is the dominant Ti-related defect in b-Ga2O3 and is associated with a single Ti atom. This finding is further corroborated by hybrid functional calculations that predict Ti substituting on an octahedral Ga site, denoted as TiGaII, to be a good candidate for E3. Moreover, the deep level transient spectroscopy results show that the level previously labeled E2 and attributed to Fe substituting on a gallium site (FeGa) consists of two overlapping signatures labeled E2a and E2b. We tentatively assign E2a and E2b to Fe substituting for Ga on a tetrahedral or an octahedral site, respectively.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.librarianam2020en_ZA
dc.description.sponsorshipThe Research Council of Norway through the FUNDAMENT project (Project No. 251131), the Norwegian Micro- and Nano-Fabrication Facility (NorFab, Project No. 245963), the Faculty of Mathematics and Natural Sciences at the University of Oslo via the strategic research initiative FOXHOUND, and the Norwegian nano-network.en_ZA
dc.description.urihttp://scitation.aip.org/content/aip/journal/aplen_ZA
dc.identifier.citationZimmermann, C., Frodason, Y.K., Barnard, A.W. et al. Ti- and Fe-related charge transition levels in beta-Ga2O3. Applied Physics Letters 116, 072101 (2020); https://DOI.org/10.1063/1.5139402.en_ZA
dc.identifier.issn0003-6951 (print)
dc.identifier.issn1077-3118 (online)
dc.identifier.other10.1063/1.5139402
dc.identifier.urihttp://hdl.handle.net/2263/76276
dc.language.isoenen_ZA
dc.publisherAmerican Institute of Physicsen_ZA
dc.rights© 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.en_ZA
dc.subjectTi concentrationen_ZA
dc.subjectE3en_ZA
dc.subjectTi substitutingen_ZA
dc.subjectTi atomen_ZA
dc.subjectDeep-level transient spectroscopy (DLTS)en_ZA
dc.subjectBeta-Ga2O3en_ZA
dc.titleTi- and Fe-related charge transition levels in beta-Ga2O3en_ZA
dc.typeArticleen_ZA

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