Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique

dc.contributor.authorAhmed, Mustafa Abaas Mohamedelkhair
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.authorNel, Jacqueline Margot
dc.date.accessioned2019-07-16T09:36:43Z
dc.date.available2019-07-16T09:36:43Z
dc.date.issued2019-07
dc.description.abstractIn this study, we fabricated Schottky diode devices on ZnO, Sm and Ce doped and co-doped ZnO thin films grown by the sol–gel spin coating. The structural and optical properties of the sol–gel films are studied, and the electrical characteristics of the Schottky diodes are investigated. The crystalline structure and surface morphology were studied using x-ray diffraction and scanning electron microscopy, respectively. Photoluminescence spectroscopy of all films measured at room temperature showed that the UV emission peak was composed of two peaks located at 388 and 405 nm and no visible light emission was detected. UV–vis study revealed that the optical band gap of ZnO decreased after doping. Room temperature I–V characterization revealed a rectification behaviour of all samples. The Schottky diodes fabricated on (Sm and Ce) co-doped ZnO manifest device properties with good rectification (six orders of magnitude), low ideality factor (1.62) and barrier height of 0.82 eV.en_ZA
dc.description.departmentPhysicsen_ZA
dc.description.librarianhj2019en_ZA
dc.description.sponsorshipThe South African National Research Foundation (NRF) grant no: 91550 and 111744.en_ZA
dc.description.urihttp://www.elsevier.com/locate/matresbuen_ZA
dc.identifier.citationAhmed, M.A.M, Meyer, W.E. & Nel, J.M. 2019, 'Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique', Materials Research Bulletin, vol. 115, pp. 12-18.en_ZA
dc.identifier.issn0025-5408 (print)
dc.identifier.issn1873-4227 (online)
dc.identifier.other10.1016/j.materresbull.2019.03.005
dc.identifier.urihttp://hdl.handle.net/2263/70735
dc.language.isoenen_ZA
dc.publisherElsevieren_ZA
dc.rights© 2019 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Research Bulletin. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Materials Research Bulletin, vol. 115, pp. 12-18, 2019. doi : 10.1016/j.materresbull.2019.03.005.en_ZA
dc.subjectElectrical propertiesen_ZA
dc.subjectOptical propertiesen_ZA
dc.subjectStructural propertiesen_ZA
dc.subjectSol gelen_ZA
dc.subjectZnOen_ZA
dc.titleStructural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical techniqueen_ZA
dc.typePreprint Articleen_ZA

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