Electrical characterization of Au/Ni Schottky contacts on GaN synthesized using electrodeposition

dc.contributor.authorAli, Abdulraoof Idriss Ahmed
dc.contributor.authorOmotoso, Ezekiel
dc.contributor.authorNel, Jacqueline Margot
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.emailu18374710@tuks.co.zaen_US
dc.date.accessioned2023-04-06T12:34:02Z
dc.date.issued2023-04
dc.description.abstractPlease read abstract in the article.en_US
dc.description.departmentPhysicsen_US
dc.description.embargo2024-02-24
dc.description.librarianhj2023en_US
dc.description.sponsorshipThe South African National Research Foundation (NRF).en_US
dc.description.urihttps://iopscience.iop.org/journal/0268-1242en_US
dc.identifier.citationAli, A.I., Omotoso, E., Nel, J.M. & Meyer, W.E. 2023, 'Electrical characterization of Au/Ni Schottky contacts on GaN synthesized using electrodeposition', Semiconductor Science and Technology, vol. 38, no. 4, art. 45005, doi : 10.1088/1361-6641/acbb98.en_US
dc.identifier.issn0268-1242 (print)
dc.identifier.issn1361-6641 (online)
dc.identifier.other10.1088/1361-6641/acbb98
dc.identifier.urihttp://hdl.handle.net/2263/90392
dc.language.isoenen_US
dc.publisherIOP Publishingen_US
dc.rights© 2023 IOP Publishing Ltd.en_US
dc.subjectDeep level transient spectroscopy (DLTS)en_US
dc.subjectAu/Ni Schottky diodesen_US
dc.subjectGaN synthesizeden_US
dc.subjectElectrodepositionen_US
dc.titleElectrical characterization of Au/Ni Schottky contacts on GaN synthesized using electrodepositionen_US
dc.typePostprint Articleen_US

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