Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition

dc.contributor.authorSplith, Daniel
dc.contributor.authorMuller, Stefan
dc.contributor.authorSchmidt, Florian
dc.contributor.authorVon Wenckstern, Holger
dc.contributor.authorJansen van Rensburg, Johan
dc.contributor.authorMeyer, Walter Ernst
dc.contributor.authorGrundmann, Marius
dc.date.accessioned2014-03-07T10:13:56Z
dc.date.available2014-03-07T10:13:56Z
dc.date.issued2014-01
dc.description.abstractPlease read abstract in the article.en
dc.description.librarianhb2014en
dc.description.librarianai2014
dc.description.sponsorshipEFRE (SAB 100132251) and by Universität Leipzig.en
dc.description.urihttp://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319en
dc.identifier.citationSplith, D, Muller, S, Schmidt, F, Von Wenckstern, H., Van Rensburg, JJ, Meyer, WE & Grundmann, M 2014, 'Determination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser deposition', Physica Status Solidi (A) Applications and Materials Science, vol. 211, no. 1, pp. 40-47.en
dc.identifier.issn1862-6300 (print)
dc.identifier.issn1862-6319 (online)
dc.identifier.other10.1002/pssa.201330088
dc.identifier.urihttp://hdl.handle.net/2263/37099
dc.language.isoenen
dc.publisherWiley-Blackwellen
dc.rights© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the pre-peer reviewed version of the following article : Physica Status Solidi A : Applications and Materials Science, vol. 211, no.1, pp. 40-47, 2014. doi : 10.1002/pssa.201330088 which has been published in final form at : http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6319en
dc.subjectGallium oxideen
dc.subjectHeteroepitaxyen
dc.subjectSchottky barriersen
dc.subject.lcshGallium compoundsen
dc.subject.lcshThin filmsen
dc.subject.lcshPulsed laser depositionen
dc.subject.lcshSemiconductorsen
dc.titleDetermination of the mean and the homogeneous barrier height of Cu Schottky contacts on heteroepitaxial β-Ga2O3 thin films grown by pulsed laser depositionen
dc.typePostprint Articleen

Files

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
Splith_Determination_2014.pdf
Size:
5.46 MB
Format:
Adobe Portable Document Format
Description:
Postprint Article
Download

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

Research Articles (Physics)
Research Articles (University of Pretoria)
Simple item page