Electrical characterization of semiconductor heterostructures

Abstract

Advances in growth techniques for semiconductor microstructures have led to a demand for more sophisticated characterization techniques, suitable for more accurate characterization of microstructures. Capacitance-voltage (CV) profiling provides a relatively inexpensive technique suitable for the characterization of doping profiles, isotype heterojunctions, and delta doped structures. Furthermore, this technique can easily be adapted to measure a large number of samples on a routine basis. In this dissertation the application of the CV profiling technique to isotype heterostructures and delta doped structures is described. The results obtained by CV measurements on delta doped structures are compared to those obtained by secondary ion mass spectroscopy (SIMS).