Abstract:
In this thesis, we have developed a reproducible, safe, and scalable sequential thermal vapour deposition (STVD) method for the growth of quality 3D halide perovskite (HaP) thin films. High-quality methylammonium lead tri-bromide (MAPbBr3), methylammonium lead tri-iodide (MAPbI3), and methylammonium lead bromide-iodide (MAPb(I1-xBrx)3) thin films have been optimised using the STVD technique. The structural, optical, morphological, and electrical properties were tuned by varying the thicknesses of the organic (MAI, MABr) and inorganic (PbI2, PbBr2) precursor thin films and post-annealing times of the HaP. X-ray diffractograms confirmed the cubic MAPbBr3 structure with the Pm¯3 m space group, tetragonal MAPbI3 crystal structure with I4/mcm space group, and the tetragonal MAPbI3 structure being transformed to cubic MAPbBr3 system as MAPb(I1-xBrx)3 (x=0.89-0.95) forms. UV-Vis spectra revealed broad absorption bands with a redshift in absorption onset from 540 to 550 nm for MAPbBr3 and 750 to 780 nm for MAPbI3 as the thickness of respective organic precursors increased from 300 to 500 nm. The bandgap of MAPb(I1-xBrx)3 decreased from 2.21 to 2.14 eV as the thicknesses of MABr precursors increased from 300 to 500 nm. The crystallisation of the HaP started within the chamber, and prolonged post-annealing times exceeding 10 min caused the transformation of MAPbI3 to PbI2. Scanning Electron Micrographs show pin-hole-free and densely packed grains with an average size that increases as thicknesses increase. The charge carrier mobility increases while trap density decreases as the thickness of organic precursors increased. Besides, the thesis investigated the growth and stability of thin MAPbBr3 films at metal/MAPbBr3 interfaces. We studied the structure, morphology, and stability of the optimised MAPbBr3 perovskite on aluminium (Al), tin (Sn), silver (Ag), gold-zinc (Au-Zn) and gold (Au) electrodes, immediately and 60 days later. FE-SEM images show an average grain size that increased linearly with the work function from 294 nm for Al to 850 nm for Au. The MAPbBr3 grains remain glued to Sn, Ag, Au-Zn but delaminate quickly on Al. X-ray analysis of MAPbBr3 reveals variable crystallographic texturing for various metals and loss in intensity of prominent peaks at different rates over time. We found that the best thicknesses of 100 nm PbI2 and 500 nm MAI, and 100 nm PbBr2 and 500 nm MABr are needed for the preparation of quality MAPbI3 and MAPbBr3 thin films for solar cells, respectively. Quality thin MAPb(I0.11Br0.89)3 film is formed by inter-diffusion and halide exchange processes when optimised MAPbBr3 is grown on optimised MAPbI3 as a bottom layer. Al speeds up the degradation of MAPbBr3 at Al/MAPbBr3 while MAPbBr3 is relatively stable at Au-Zn/MAPbBr3 interfaces.
