The effect of ion irradiation and annealing on the microstructure and migration behaviour of implanted Sr and Ag in SiC have been investigated. SiC is used as the main barrier for fission products in modern high temperature gas cooled reactors. An understanding of the transport behaviour of the implanted ions under irradiation by swift heavy ions (SHI) will shed some light into SiC’s effectiveness in the retention of fission products. The diffusion behaviour of silver (Ag) and strontium (Sr) implanted separately into SiC was investigated after irradiation by xenon ions and isochronal annealing methods from 1100 ˚C up to
temperatures of 1500 ˚C in step of 100 ˚C for 5 hours. Ion implantation and ion irradiation were performed at room temperature. The implantation fluences in all cases were in the order of 2×10 16 ions per cm 2 . Some of the implanted samples were then irradiated by SHI at different fluences (i.e. 3.4×10 14 and 8.4×10 14 ions per cm 2 ). The implantation depth profiles before and after irradiation and annealing were determined by Rutherford backscattering spectroscopy (RBS). The microstructure of SiC individually implanted with Ag and Sr were investigated using Raman spectroscopy and scanning electron microscopy (SEM). Implantation of Ag and Sr amorphized the SiC, while SHIs irradiation of the as-implanted SiC resulted in limited recrystallization of the initially amorphized SiC. Annealing at 1100 °C caused more recrystallization on the un-irradiated but implanted samples compared to SHI irradiated samples. This poor recrystallization of the irradiated SiC samples was due to the amount of impurities (i.e. concentration of Ag or Sr atoms) retained after annealing at 1100 o C. Raman and SEM results showed that annealing of the un-irradiated but implanted samples at 1100 °C resulted in large average crystal size compared to the irradiated samples annealed in the same conditions. RBS results showed that SHI irradiation alone induced no change in the implanted Ag and Sr. However, annealing the SHI irradiated samples iscohonally up to 1500 ˚C showed a strong diffusion and release of Ag and Sr as compared to the un-irradiated but implanted samples. The differences in the migration behavior of Ag and Sr is due to the difference in SiC structure and recrystallization in the irradiated and un-irradiated but implanted samples.