Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC

Show simple item record Madito, Moshawe J. Hlatshwayo, Thulani Thokozani Skuratov, Vladimir A. Mtshali, Christopher B. Manyala, Ncholu I. Khumalo, Zakhelumuzi M. 2019-08-15T12:25:31Z 2019-11
dc.description.abstract Please read abstract in the article. en_ZA
dc.description.department Physics en_ZA
dc.description.embargo 2020-11-01
dc.description.librarian hj2019 en_ZA
dc.description.sponsorship The National Research Foundation of South Africa (NRF) via iThemba LABS Materials Research Department (MRD). en_ZA
dc.description.uri en_ZA
dc.identifier.citation Madito, M.J., Hlatshwayo, T.T., Skuratov, V.A. et al. 2019, 'Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC', Applied Surface Science, vol. 493, pp. 1291-1298. en_ZA
dc.identifier.issn 0169-4332 (print)
dc.identifier.issn 1873-5584 (online)
dc.identifier.other 10.1016/j.apsusc.2019.07.147
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2019 Elsevier B.V.. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. A definitive version was subsequently published in Applied Surface Science, vol. 493, pp. 1291-1298, 2019. doi : 10.1016/j.apsusc.2019.07.147. en_ZA
dc.subject Rutherford backscattering spectrometry (RBS) en_ZA
dc.subject Swift heavy ion (SHI) en_ZA
dc.subject Scanning near-field optical microscopy (SNOM) en_ZA
dc.subject 4H-SiC en_ZA
dc.subject Depth profiles en_ZA
dc.subject Xe ions en_ZA
dc.subject Silicon carbide en_ZA
dc.subject Epitaxial layer en_ZA
dc.subject Stopping and range of ions in matter (SRIM) en_ZA
dc.title Characterization of 167 MeV Xe ion irradiated n-type 4H-SiC en_ZA
dc.type Postprint Article en_ZA

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