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Diffusion of a mono-energetic implanted species with a Gaussian profile

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Authors

Malherbe, Johan B.
Selyshchev, Pavel
Odutemowo, Opeyemi Shakirah
Theron, C.C. (Chris)
Njoroge, Eric Gitau
Langa, Dolly Frans
Hlatshwayo, Thulani Thokozani

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

The implanted profile in an isotropic substrate of a mono-energetic ion species is usually very near a Gaussian profile. An exact solution to the time-dependent Fick diffusion equation of an initially Gaussian profile is presented. This solution is a general one also covering the diffusion within the two limiting cases usually considered in solutions to the Fick equation, viz. a perfect sink at the surface and a perfectly reflecting surface plane at the surface. An analysis of the solutions for these two cases shows that at small diffusion times the main effect of annealing is a nearly symmetric broadening of the implanted profile. At the origin and for longer diffusion times the profile deviates significantly from Gaussian. A review is also given of past attempts to extract diffusion coefficients by fitting experimental data to approximate equations based on simplified initial profiles.

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Keywords

Doping, Diffusion, Fick diffusion equation, Gaussian profile, Implanted profile, Glassy carbon

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Citation

Malherbe, J.B., Selyshchev, P.A., Odutemowo, O.S. et al. 2017, 'Diffusion of a mono-energetic implanted species with a Gaussian profile', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 406, part B, pp. 708-713.