Diffusion of a mono-energetic implanted species with a Gaussian profile
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Date
Authors
Malherbe, Johan B.
Selyshchev, Pavel
Odutemowo, Opeyemi Shakirah
Theron, C.C. (Chris)
Njoroge, Eric Gitau
Langa, Dolly Frans
Hlatshwayo, Thulani Thokozani
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
The implanted profile in an isotropic substrate of a mono-energetic ion species is usually very near a Gaussian profile. An exact solution to the time-dependent Fick diffusion equation of an initially Gaussian profile is presented. This solution is a general one also covering the diffusion within the two limiting cases usually considered in solutions to the Fick equation, viz. a perfect sink at the surface and a perfectly reflecting surface plane at the surface. An analysis of the solutions for these two cases shows that at small diffusion times the main effect of annealing is a nearly symmetric broadening of the implanted profile. At the origin and for longer diffusion times the profile deviates significantly from Gaussian. A review is also given of past attempts to extract diffusion coefficients by fitting experimental data to approximate equations based on simplified initial profiles.
Description
Keywords
Doping, Diffusion, Fick diffusion equation, Gaussian profile, Implanted profile, Glassy carbon
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Citation
Malherbe, J.B., Selyshchev, P.A., Odutemowo, O.S. et al. 2017, 'Diffusion of a mono-energetic implanted species with a Gaussian profile', Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 406, part B, pp. 708-713.