In this work, the GaN-MOCVD reactor with vertical spray
structure is simulated, and a numerical solution to the steady
flow in low pressure with substrate axisymmetrical rotating is
obtained by the computational fluid dynamics software. The
temperature field, flow field, operating pressure, rotation speed
of substrate are analyzed, and process conditions are optimized
which can make the flow field in reactor more stable to ensure
the thickness uniformity of deposited thin film. This paper not
only provides an effective solution for high-quality epitaxial
growth, but also provides a theoretical basis for the follow-up
experiment and equipment improvement.
Papers presented to the 12th International Conference on Heat Transfer, Fluid Mechanics and Thermodynamics, Costa de Sol, Spain on 11-13 July 2016.