We report on the effect of temperature on the growth of bilayer graphene on a copper foil under atmospheric pressure chemical vapour deposition (AP-CVD). Before characterization of the AP-CVD bilayer graphene, a high-quality graphene flake was obtained from the Kish bulk graphite by micro-mechanical exfoliation and characterized by using Raman spectroscopy and imaging. The Raman data of the exfoliated, high-quality graphene flake show monolayer and bilayer graphenes and were compared with the Raman data of AP-CVD graphene. Raman spectroscopy of AP-CVD graphene shows bilayer films that exhibit predominantly Bernal stacking with an I-2D/I-G ratio of similar to 1. At low growth temperature (similar to 780 degrees C), Raman disorder-related peak intensity in the AP-CVD graphene is high and decreases with an increase in growth temperature to the lowest disorder intensity at similar to 973 degrees C. The selected area electron diffraction and atomic force microscopy average step height analysis showed the thickness of the bilayer graphene. The AP-CVD graphene is uniform at low growth temperatures (similar to 780 degrees C) with a high disorder and becomes non-uniform at high growth temperatures (similar to 867-973 degrees C) with a very low disorder as bilayer graphene evolves to form islands with an average lateral size of <10m. Competition between carbon adatoms supply through dehydrogenation of the CHx species, mobility and desorption rate of the carbon-adatom species for nucleation of the bilayer graphene as a function of temperature is elucidated. This study provides further insight into the growth mechanisms of bilayer graphene by AP-CVD on Cu.