Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition

Show simple item record

dc.contributor.author Nyamhere, Cloud
dc.contributor.author Chawanda, Albert
dc.contributor.author Das, A.G.M.
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Hayes, M.
dc.date.accessioned 2008-06-05T11:29:14Z
dc.date.available 2008-06-05T11:29:14Z
dc.date.issued 2007-12-15
dc.description.abstract When using Schottky barrier diodes (SBDs) on silicon (Si) to study the thermal stability of radiation-induced defects, point defects injection into the silicon substrate can occur at temperatures where silicidation occurs. These injected point defects can react with the radiation-induced defects and may lead to an incorrect picture of annealing studies of these defects. In order to overcome this problem, we have annealed (1) ruthenium (Ru), cobalt (Co), nickel (Ni) and platinum (Pt) SBDs to form stable silicides on phosphorus (P) doped Si and (2) have measured the electrical characteristics of defects introduced during diodes fabrication by electron beam deposition (EBD), using conventional and (high resolution) Laplace (L-) deep level transient spectroscopy (DLTS). A primary electron trap at 0.48 eV below the conduction band was observed after EBD processing of the contacts. Isochronal annealing of the SBDs at 350 °C, annealed-in defects 0.05, 0.09, 0.18 and 0.28 eV below the conduction band. All the EBD-induced defects were removed after annealing at 600 °C. Primary defect depth profile versus annealing temperature results are also presented in this study. en
dc.format.extent 251931 bytes
dc.format.mimetype application/pdf
dc.identifier.citation Nyamhere, C, Chawanda, A, Das, AGM, Auret, FD & Hayes, M 2007, 'Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition', Physica B : Condensed Matter, vol. 401-402, pp. 226-229. [http://www.sciencedirect.com/science/journal/09214526] en
dc.identifier.issn 0921-4526
dc.identifier.other 10.1016/j.physb.2007.08.152
dc.identifier.uri http://hdl.handle.net/2263/5816
dc.language.iso en en
dc.publisher Elsevier en
dc.rights Elsevier en
dc.subject Schottky contacts en
dc.subject Electron beam deposition en
dc.subject Silicides en
dc.subject Defects en
dc.subject DLTS en
dc.subject L-DLTS en
dc.subject.lcsh Diodes, Schottky-barrier
dc.subject.lcsh Electron beams
dc.subject.lcsh Silicides
dc.subject.lcsh Deep level transient spectroscopy
dc.title Thermal stability of Co, Ni, Pt or Ru Schottky contacts on n-Si and defects introduced thereon during contacts fabrication using electron beam deposition en
dc.type Postprint Article en


Files in this item

This item appears in the following Collection(s)

Show simple item record