Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

Auret, Francois Danie; Meyer, Walter Ernst; Janse van Rensburg, Pieter Johan; Hayes, M.; Nel, Jacqueline Margot; Von Wenckstern, Holger; Schmidt, H.; Biehne, G.; Hochmuth, H.; Lorenz, M.; Grundmann, Marius

dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Janse van Rensburg, Pieter Johan
dc.contributor.author	Hayes, M.
dc.contributor.author	Nel, Jacqueline Margot
dc.contributor.author	Von Wenckstern, Holger
dc.contributor.author	Schmidt, H.
dc.contributor.author	Biehne, G.
dc.contributor.author	Hochmuth, H.
dc.contributor.author	Lorenz, M.
dc.contributor.author	Grundmann, Marius
dc.date.accessioned	2008-06-05T11:27:34Z
dc.date.available	2008-06-05T11:27:34Z
dc.date.issued	2007-12
dc.description.abstract	Please refer to abstract in article	en
dc.format.extent	265167 bytes
dc.format.mimetype	application/pdf
dc.identifier.citation	Auret, FD, Meyer, WE, Janse van Rensburg, PJ, Hayes, M, Nel, JM, Von Wenckstern, H, Schmidt, H, Biehne, G, Hochmuth, H, Lorenz, M & Grundmann, M 2007, 'Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band', Physica B : Condensed Matter, vol. 401-402, pp. 378-381.	en
dc.identifier.isbn	10.1016/j.physb.2007.08.192
dc.identifier.issn	0921-4526
dc.identifier.uri	http://hdl.handle.net/2263/5815
dc.language.iso	en	en
dc.publisher	Elsevier	en
dc.rights	Elsevier	en
dc.subject	ZnO	en
dc.subject	High resolution Laplace DLTS	en
dc.subject	Defects	en
dc.subject.lcsh	Semiconductors	en
dc.subject.lcsh	Deep level transient spectroscopy	en
dc.subject.lcsh	Zinc oxide	en
dc.subject.lcsh	Pulsed laser deposition	en
dc.title	Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band	en
dc.type	Article	en