Analysis of temperature-dependant current-voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

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dc.contributor.author Mayimele, Meeheketo Advice
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Janse van Rensburg, J.P.
dc.contributor.author Diale, M. (Mmantsae Moche)
dc.date.accessioned 2016-05-03T10:09:09Z
dc.date.issued 2016-01
dc.description.abstract We report on the analysis of current voltage (I-V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80-320 K temperature range. Assuming thermionic emission (TE) theory, the forward bias I-V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung’s method in the extraction of the series resistance with Ohm’s law, it was observed that at lower temperatures (T<180 K) the series resistance decreased with increasing temperature, the absolute minimum was reached near 180 K and increases linearly with temperature at high temperatures (T>200 K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99 eV and a standard deviation of 0.02 eV. A mean barrier height of 0.11 eV and Richardson constant value of 37 A cm-2 K-2 were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights. en_ZA
dc.description.department Physics en_ZA
dc.description.embargo 2017-01-31
dc.description.librarian hb2016 en_ZA
dc.description.sponsorship South Africa National Research Foundation (NRF) and the University of Pretoria. en_ZA
dc.description.uri http://www.journals.elsevier.com/physica-b-condensed-matter en_ZA
dc.identifier.citation Mayimele, MA, Auret, FD, Van Rensburg, JPJ & Diale, M 2016, 'Analysis of temperature-dependant current-voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes', Physica B : Condensed Matter, vol. 480, pp. 58-62. en_ZA
dc.identifier.issn 0921-4526 (print)
dc.identifier.issn 1873-2135 (online)
dc.identifier.other 10.1016/j.physb.2015.07.034
dc.identifier.uri http://hdl.handle.net/2263/52231
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2015 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Physica B: Consensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B: Consensed Matter, vol. 480, pp. 58-62, 2016. doi : 10.1016/j.physb.2015.07.034. en_ZA
dc.subject Series resistance en_ZA
dc.subject Barrier inhomogeneities en_ZA
dc.subject Gaussian distribution en_ZA
dc.subject Modified Richardson plot en_ZA
dc.title Analysis of temperature-dependant current-voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes en_ZA
dc.type Postprint Article en_ZA


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