Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences

Show simple item record Omotoso, Ezekiel Meyer, W.E. (Walter Ernst) Auret, F.D. (Francois Danie) Diale, M. (Mmantsae Moche) Ngoepe, P.N.M. (Phuti Ngako Mahloka) 2016-03-11T08:50:25Z 2016-01
dc.description.abstract Irradiation experiments have been carried out on 1.9 × 1016 cm–3 nitrogen-doped 4H-SiC at room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6 × 1010 to 9.2 × 1011 cm–2. Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and free carrier removal rate due to alpha-particle irradiation, respectively. As radiation fluence increases, the ideality factors increased from 1.20 to 1.85 but the Schottky barrier height (SBHI-V) decreased from 1.47 to 1.34 eV. Free carrier concentration, Nd decreased with increasing fluence from 1.7 × 1016 to 1.1 × 1016 cm–2 at approximately 0.70 μm depth. The reduction in Nd shows that defects were induced during the irradiation and have effect on compensating the free carrier. The free carrier removal rate was estimated to be 6480±70 cm–1. Alpha-particle irradiation introduced two electron traps (E0.39 and E0.62), with activation energies of 0.39±0.03 eV and 0.62±0.08 eV, respectively. The E0.39 as attribute related to silicon or carbon vacancy, while the E0.62 has the attribute of Z1/Z2. en_ZA
dc.description.embargo 2017-01-31
dc.description.librarian hb2015 en_ZA
dc.description.sponsorship National Research Foundation (NRF) of South African (Grant specific unique reference number (UID) 78838). en_ZA
dc.description.uri en_ZA
dc.identifier.citation Omotoso, E, Meyer, WE, Auret, FD, Diale, MM & Ngoepe, PNM 2016, 'Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences', Physica B: Condensed Matter, vol. 480, pp. 196-200. en_ZA
dc.identifier.issn 0921-4526 (print)
dc.identifier.issn 1873-2135 (online)
dc.identifier.other 10.1016/j.physb.2015.08.014
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2016 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Physica B: Consensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B: Consensed Matter, vol. 480, pp. 196-200, 2016. doi : 10.1016/j.physb.2015.08.014. en_ZA
dc.subject Free carrier removal rate en_ZA
dc.subject Carrier concentration en_ZA
dc.subject 4H-SiC en_ZA
dc.subject Alpha-particle irradiation en_ZA
dc.subject Deep-level transient spectroscopy (DLTS) en_ZA
dc.title Response of Ni/4H-SiC Schottky barrier diodes to alpha-particle irradiation at different fluences en_ZA
dc.type Postprint Article en_ZA

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