Abstract:
Irradiation experiments have been carried out on 1.9 × 1016 cm–3 nitrogen-doped 4H-SiC at
room temperature using 5.4 MeV alpha-particle irradiation over a fluence ranges from 2.6 ×
1010 to 9.2 × 1011 cm–2. Current-voltage (I-V), capacitance-voltage (C-V) and deep level
transient spectroscopy (DLTS) measurements have been carried out to study the change in
characteristics of the devices and free carrier removal rate due to alpha-particle irradiation,
respectively. As radiation fluence increases, the ideality factors increased from 1.20 to 1.85
but the Schottky barrier height (SBHI-V) decreased from 1.47 to 1.34 eV. Free carrier
concentration, Nd decreased with increasing fluence from 1.7 × 1016 to 1.1 × 1016 cm–2 at
approximately 0.70 μm depth. The reduction in Nd shows that defects were induced during
the irradiation and have effect on compensating the free carrier. The free carrier removal rate
was estimated to be 6480±70 cm–1. Alpha-particle irradiation introduced two electron traps
(E0.39 and E0.62), with activation energies of 0.39±0.03 eV and 0.62±0.08 eV, respectively.
The E0.39 as attribute related to silicon or carbon vacancy, while the E0.62 has the attribute of
Z1/Z2.
