Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures

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dc.contributor.author Ngoepe, P.N.M. (Phuti Ngako Mahloka)
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.contributor.author Diale, M. (Mmantsae Moche)
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Van Schalkwyk, Louwrens
dc.date.accessioned 2015-12-04T06:32:14Z
dc.date.available 2015-12-04T06:32:14Z
dc.date.issued 2014-04
dc.description.abstract In this study a comparison is made between the optical and electrical properties of Ni/Au and Ni/Ir/Au Schottky photodiodes based on Al0.35Ga0.65N. The effects of inserting Ir between Ni and Au are of particular interest. The comparison in the properties is done after annealing the photodiodes at different temperatures in an argon gas ambient. The reverse current decreased with annealing temperature up to 400 oC for the Ni/Au Schottky photodiode and up to 500 oC for the Ni/Ir/Au photodiode. The Schottky barrier heights increased with increasing annealing temperature. The responsivity of the Ni/Au photodiode was higher than that of the Ni/Ir/Au photodiode. The transmission of the Ni/Au metal layer improved with increasing annealing temperature up to 500 oC and the best transmission of the Ni/Ir/Au metal layer was after 400 oC annealing. en_ZA
dc.description.librarian hb2015 en_ZA
dc.description.uri http://www.elsevier.com/locate/physb en_ZA
dc.identifier.citation Ngoepe, PNM, Meyer, WE, Diale, M, Auret, FD & Van Schalkwyk, L 2014, 'Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures', Physica B: Condensed Matter, vol. 439, pp. 119-121. en_ZA
dc.identifier.issn 0921-4526 (print)
dc.identifier.issn 1873-2135 (online)
dc.identifier.other 10.1016/j.physb.2014.01.011
dc.identifier.uri http://hdl.handle.net/2263/51063
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2014 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Physica B: Consensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B: Consensed Matter, vol. 439, pp. 119-121,2014. doi : 10.1016/j.physb.2014.01.011. en_ZA
dc.subject Annealing en_ZA
dc.subject Schottky photodiode en_ZA
dc.subject AlGaN en_ZA
dc.title Optical and electrical characterization of AlGaN based Schottky photodiodes after annealing at different temperatures en_ZA
dc.type Postprint Article en_ZA


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