Introduction and annealing of primary defects in proton-bombarded n-GaN

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dc.contributor.author Schmidt, Matthias
dc.contributor.author De Meyer, Hannes
dc.contributor.author Jansen van Rensburg, P.J.
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.contributor.author Auret, F.D. (Francois Danie)
dc.date.accessioned 2015-11-16T08:37:10Z
dc.date.available 2015-11-16T08:37:10Z
dc.date.issued 2014-01
dc.description.abstract We report on in situ space charge spectroscopy measure-ments on low-temperature 1.6 MeV proton-bombarded n-type gallium nitride thin film samples. The scope of this study was to investigate the introduction and annealing dynamics of radiation-induced lattice damage. Using optical excitation allowed for the detection of electronic defect states in the entire GaN bandgap and to detect unstable primary defects that would have been invisible in thermal space charge spectroscopic measurements. The introduction of compensating acceptor-like primary defects by the bombardment was observed and manifested as a decrease in the sample capacitance. After the bombardment the concentrations of deep-levels and acceptor states were monitored by deep-level transient spectroscopy and photo-capacitance measurements while the temperature was increased. It was found that annealing and reactions of primary bombardment-induced defects occurs even below room-temperature which might account for the radiation-hardness of GaN. en_ZA
dc.description.librarian hb2015 en_ZA
dc.description.sponsorship University of Pretoria and the National Research Foundation (NRF). en_ZA
dc.description.uri http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-3951 en_ZA
dc.identifier.citation Schmidt, M, De Meyer, H, Van Rensburg, PJ, Meyer, WE & Auret, FD 2014, 'Introduction and annealing of primary defects in proton-bombarded n-GaN', Physica Status Solidi B : Basic Solid State Physics, vol. 251, no. 1, pp. 211-218. en_ZA
dc.identifier.issn 0370-1972 (print)
dc.identifier.issn 1521-3951 (online)
dc.identifier.other 10.1002/pssb.201349191
dc.identifier.uri http://hdl.handle.net/2263/50485
dc.language.iso en en_ZA
dc.publisher Wiley en_ZA
dc.rights © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the pre-peer reviewed version of the following article : Introduction and annealing of primary defects in proton-bombarded n-GaN, Physica Status Solidi B : Basic Solid State Physics, vol. 251, no. 1, pp. 211-218, 2014. doi : 10.1002/pssb.201349191, which has been published in final form at : http://onlinelibrary.wiley.comjournal/10.1002/(ISSN)1521-3951. en_ZA
dc.subject Capacitance–voltage spectroscopy en_ZA
dc.subject Deep levels en_ZA
dc.subject Defects en_ZA
dc.subject Proton irradiation en_ZA
dc.subject Deep-level transient spectroscopy (DLTS) en_ZA
dc.subject Gallium nitride (GaN) en_ZA
dc.title Introduction and annealing of primary defects in proton-bombarded n-GaN en_ZA
dc.type Postprint Article en_ZA


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