Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing

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dc.contributor.author Munthali, Kinnock V.
dc.contributor.author Theron, C.C. (Chris)
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Coelho, Sergio M.M.
dc.date.accessioned 2015-11-02T07:52:59Z
dc.date.available 2015-11-02T07:52:59Z
dc.date.issued 2015-06
dc.description.abstract Rutherford backscattering spectrometry(RBS) analysis , carried out at various annealing temperatures, of a thin film of ruthenium on n-type 4-hexagonal silicon carbide (4H-SiC) showed evidence of ruthenium oxidation, ruthenium silicide formation and diffusion of ruthenium into silicon carbide starting from an annealing temperature of 400oC. Ruthenium oxidation was more pronounced, and ruthenium and Silicon inter-diffusion was very deep after annealing at 800oC. Raman analysis of some samples also showed ruthenium silicide formation and oxidation. The Schottky barrier diodes showed very good linear capacitance-voltage characteristics and excellent forward current-voltage characteristics, despite the occurrence of the chemical reactions and inter-diffusion of ruthenium and silicon at ruthenium-silicon-carbide interface, up to an annealing temperature of 800oC. en_ZA
dc.description.librarian hb2015 en_ZA
dc.description.uri http://link.springer.com/journal/12034 en_ZA
dc.identifier.citation Munthali, KV, Theron, CC, Auret, FD & Coelho, SMM 2015, 'Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing', Bulletin of Materials Science, vol. 38, no. 3, pp. 711-715. en_ZA
dc.identifier.issn 0250-4707 (print)
dc.identifier.issn 0973-7669 (online)
dc.identifier.other 10.1007/s12034-015-0904-1
dc.identifier.uri http://hdl.handle.net/2263/50301
dc.language.iso en en_ZA
dc.publisher Indian Academy of Sciences en_ZA
dc.rights © Indian Academy of Sciences. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. en_ZA
dc.subject Rutherford backscattering spectrometry en_ZA
dc.subject Raman spectroscopy en_ZA
dc.subject Oxidation en_ZA
dc.subject Silicide en_ZA
dc.subject Schottky barrier diodes en_ZA
dc.subject Ruthenium en_ZA
dc.subject 4H-SiC en_ZA
dc.title Interface behaviour and electrical performance of ruthenium Schottky contact on 4H-SiC after argon annealing en_ZA
dc.type Article en_ZA


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