Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density

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dc.contributor.author Paradzah, Alexander Tapera
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Legodi, M.J. (Matshisa Johannes)
dc.contributor.author Omotoso, Ezekiel
dc.contributor.author Diale, M. (Mmantsae Moche)
dc.date.accessioned 2015-10-13T06:10:22Z
dc.date.issued 2015-09
dc.description.abstract Nickel Schottky diodes were fabricated on 4H-SiC. The diodes had excellent current rectification with about ten orders of magnitude between 50 V and +2 V. The ideality factor was obtained as 1.05 which signifies the dominance of the thermionic emission process in charge transport across the barrier. Deep level transient spectroscopy revealed the presence of four deep level defects in the 30–350 K temperature range. The diodes were then irradiated with 5.4 MeV alpha particles up to fluence of 2.6 1010 cm 2. Current–voltage and capacitance–voltage measurements revealed degraded diode characteristics after irradiation. DLTS revealed the presence of three more energy levels with activation enthalpies of 0.42 eV, 0.62 eV and 0.76 eV below the conduction band. These levels were however only realized after annealing the irradiated sample at 200 C and they annealed out at 400 C. The defect depth concentration was determined for some of the observed defects. en_ZA
dc.description.embargo 2016-09-30
dc.description.librarian hb2015 en_ZA
dc.description.sponsorship National Research Foundation (NRF) of South Africa. en_ZA
dc.description.uri http://www.elsevier.com/locate/nimb en_ZA
dc.identifier.citation Paradzah, AT, Auret, FD, Legodi, MJ, Omotoso, E & Diale, M 2015, 'Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 358, pp. 112-116. en_ZA
dc.identifier.issn 0168-583X (print)
dc.identifier.issn 1872-9584 (online)
dc.identifier.other 10.1016/j.nimb.2015.06.006
dc.identifier.uri http://hdl.handle.net/2263/50209
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2015 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. A. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 358, pp. 112-116, 2015. doi :10.1016/j.nimb.2015.06.006. en_ZA
dc.subject n-Type 4H-SiC en_ZA
dc.subject Schottky diode en_ZA
dc.subject Deep level transient spectroscopy (DLTS) en_ZA
dc.subject Alpha particle irradiation en_ZA
dc.subject Defects en_ZA
dc.title Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density en_ZA
dc.type Postprint Article en_ZA


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