Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density
Loading...
Date
Authors
Paradzah, Alexander Tapera
Auret, Francois Danie
Legodi, Matshisa Johannes
Omotoso, Ezekiel
Diale, M. (Mmantsae Moche)
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Nickel Schottky diodes were fabricated on 4H-SiC. The diodes had excellent current rectification with
about ten orders of magnitude between 50 V and +2 V. The ideality factor was obtained as 1.05 which
signifies the dominance of the thermionic emission process in charge transport across the barrier. Deep
level transient spectroscopy revealed the presence of four deep level defects in the 30–350 K temperature
range. The diodes were then irradiated with 5.4 MeV alpha particles up to fluence of 2.6 1010 cm 2.
Current–voltage and capacitance–voltage measurements revealed degraded diode characteristics after
irradiation. DLTS revealed the presence of three more energy levels with activation enthalpies of
0.42 eV, 0.62 eV and 0.76 eV below the conduction band. These levels were however only realized after
annealing the irradiated sample at 200 C and they annealed out at 400 C. The defect depth concentration
was determined for some of the observed defects.
Description
Keywords
n-Type 4H-SiC, Schottky diode, Deep level transient spectroscopy (DLTS), Alpha particle irradiation, Defects
Sustainable Development Goals
Citation
Paradzah, AT, Auret, FD, Legodi, MJ, Omotoso, E & Diale, M 2015, 'Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 358, pp. 112-116.