The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Omotoso, Ezekiel; Meyer, Walter Ernst; Auret, Francois Danie; Paradzah, Alexander Tapera; Diale, M. (Mmantsae Moche); Coelho, Sergio M.M.; Janse van Rensburg, Pieter Johan

dc.contributor.author	Omotoso, Ezekiel
dc.contributor.author	Meyer, Walter Ernst
dc.contributor.author	Auret, Francois Danie
dc.contributor.author	Paradzah, Alexander Tapera
dc.contributor.author	Diale, M. (Mmantsae Moche)
dc.contributor.author	Coelho, Sergio M.M.
dc.contributor.author	Janse van Rensburg, Pieter Johan
dc.date.accessioned	2015-09-22T07:46:34Z
dc.date.issued	2015-11
dc.description.abstract	Please read abstract in the article.	en_ZA
dc.description.embargo	2016-11-30
dc.description.librarian	hb2015	en_ZA
dc.description.sponsorship	National Research Foundation (NRF) of South African (Grant specific unique reference number (UID) 78838).	en_ZA
dc.description.uri	http://www.elsevier.com/locate/mssp	en_ZA
dc.identifier.citation	Omotoso, E, Meyer, WE, Auret, FD, Paradzah, AT, Diale, M, Coelho, SMM & Janse van Rensburg, PJ 2015, 'The influence of high energy electron irradiation on the schottky barrier height and the richardson constant of Ni/4H-SiC schottky diodes', Materials Science in Semiconductor Processing, vol. 39, pp. 112-118.	en_ZA
dc.identifier.issn	1369-8001 (print)
dc.identifier.issn	1873-4081 (online)
dc.identifier.other	10.1016/j.mssp.2015.04.031
dc.identifier.uri	http://hdl.handle.net/2263/50010
dc.language.iso	en	en_ZA
dc.publisher	Elsevier	en_ZA
dc.rights	© 2015 Elsevier Ltd. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Materials Science in Semiconductor Processing. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Materials Science in Semiconductor Processing, vol.39, pp. 112-118, 2015. doi : 10.1016/j.mssp.2015.04.031.	en_ZA
dc.subject	Richardson constant	en_ZA
dc.subject	Silicon carbide	en_ZA
dc.subject	High energy electron (HEE)	en_ZA
dc.subject	Metal-semiconductor (MS)	en_ZA
dc.subject	Schottky barrier diodes (SBDs)	en_ZA
dc.title	The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes	en_ZA
dc.type	Postprint Article	en_ZA