The tunnelling and electron injection reliabilities for FG transistors

Show simple item record Mabuza, Bongani Christopher Sinha, Saurabh 2015-09-10T07:30:28Z 2015-09-10T07:30:28Z 2014
dc.description.abstract PURPOSE – The purpose of this paper was to present the results of the three types of FG transistors that were investigated. The reliability issues of oxide thickness due to programming, fabrication defects and process variation may cause leakage currents and thus charge retention failure in the floating gate (FG). DESIGN/METHODOLOGY/APPROACH – The tunnelling and electron injection methods were applied to program FG devices of different lengths (180 and 350 nm) and coupling capacitor sizes. The drain current and threshold voltage changes were determined for both gate and drain voltage sweep. The devices were fabricated using IBM 130 nm process technology. FINDINGS – Current leakages are increasing with device scaling and reducing the charge retention time. During programming, charge traps may occur in the oxide and prevent further programming. Thus, the dominant factors are the reliability of oxide thickness to avoid charge traps and prevent current/charge leakages in the FG devices. The capacitive coupling (between the tunnelling and electron injection capacitors) may contribute to other reliability issues if not properly considered. ORIGINALITY/VALUE – Although the results have raised further research questions, as revealed by certain reliability issues, they have shown that the use of FGs with nanoscale technology is promising and may be suitable for memory and switching applications. en_ZA
dc.description.librarian hb2015 en_ZA
dc.description.uri en_ZA
dc.identifier.citation Mabuza, BC & Sinha, S 2014, 'The tunnelling and electron injection reliabilities for FG transistors', Microelectronics International, vol. 31, no. 2, pp. 108-115. en_ZA
dc.identifier.issn 1356-5362
dc.identifier.other 10.1108/MI-01-2013-0001
dc.language.iso en en_ZA
dc.publisher Emerald en_ZA
dc.rights © Emerald Group Publishing Limited. en_ZA
dc.subject CMOS switches en_ZA
dc.subject Electron traps en_ZA
dc.subject Nanoscale en_ZA
dc.subject Threshold voltage shift en_ZA
dc.subject Floating gate (FG) en_ZA
dc.title The tunnelling and electron injection reliabilities for FG transistors en_ZA
dc.type Postprint Article en_ZA

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