Influence of recombination on the thermal conduction in bipolar semiconductors and semiconductor structures

Abstract

Paper presented to the 10th International Conference on Heat Transfer, Fluid Mechanics and Thermodynamics, Florida, 14-16 July 2014.

It is investigated the influence of recombination on the energy flux in bipolar semiconductors. The expression for energy flux in a nondegenerate semiconductor in a linear approximation with respect to perturbation in a quasi-neutral approximation taking into account recombination (the presence of nonequilibrium charge carriers in the semiconductor) has been obtained. In a one-dimension case when the different temperatures from the both sides of the semiconductor have been considered the energy flux density has been calculated in two different cases: the case of weak recombination and the case of strong recombination.