Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation

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dc.contributor.author Njoroge, E.G. (Eric)
dc.contributor.author Theron, C.C. (Chris)
dc.contributor.author Malherbe, Johan B.
dc.contributor.author Van der Berg, Nic (Nicolaas George)
dc.contributor.author Hlatshwayo, Thulani Thokozani
dc.contributor.author Skuratov, V.A.
dc.date.accessioned 2015-01-29T09:09:11Z
dc.date.available 2015-01-29T09:09:11Z
dc.date.issued 2015-07
dc.description.abstract In this study thin Zr films (135 nm) were deposited on 6H-SiC substrate at room temperature by sputter deposition. The Zr/SiC couples were irradiated by 167 MeV Xe26+ ions at room temperature at fluences of 5.0 1012, 1.0 1013, 5.0 1013, 2.0 1014, 3.1 1014 and 6.3 1014 ions/cm2. The samples were analysed before and after irradiation using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and secondary electron microscopy (SEM). The surface morphology from SEM analysis revealed a homogeneous Zr surface which did not vary with increasing fluences of irradiation. AFM analysis revealed that the Rrms surface roughness did increase from the as-deposited value of 1.6 nm and then decrease at higher SHI irradiation fluences to 1.4 nm. RBS results indicate that interface mixing between Zr and SiC interface occurred and varied linearly with irradiation ion fluence. The value obtained for diffusivity of Zr shows that the mixing was due to interdiffusion across the interface during a transient melt phase according to the thermal spike model. en_ZA
dc.description.embargo 2016-07-01
dc.description.librarian hb2015 en_ZA
dc.description.uri http://www.elsevier.com/locate/nimb en_ZA
dc.identifier.citation Njoroge, EG, Theron, CC, Malherbe, JB, Van der Berg, NG, Hlatshwayo, TT & Skuratov, VA 2015, 'Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 354, pp. 249-254. en_ZA
dc.identifier.issn 0168-583X (print)
dc.identifier.issn 1872-9584 (online)
dc.identifier.other 10.1016/j.nimb.2014.11.118
dc.identifier.uri http://hdl.handle.net/2263/43474
dc.language.iso en en_ZA
dc.publisher Elsevier en_ZA
dc.rights © 2014 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. A. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 354, pp. 249-254, 2015. doi : 10.1016/j.nimb.2014.11.118 en_ZA
dc.subject SHI irradiation en_ZA
dc.subject Diffusion en_ZA
dc.subject Silicon carbide (SiC) en_ZA
dc.subject Zirconium (Zr) en_ZA
dc.subject Swift heavy ion (SHI) en_ZA
dc.title Surface and interface modification of Zr/SiC interface by swift heavy ion irradiation en_ZA
dc.type Postprint Article en_ZA


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