Solid state reaction of ruthenium with 6H-SiC under vacuum annealing and the impact on the electrical performance of its Schottky contact for high temperature operating SiC-based diodes

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dc.contributor.author Munthali, Kinnock V.
dc.contributor.author Theron, C.C. (Chris)
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Coelho, Sergio M.M.
dc.contributor.author Prinsloo, Linda Charlotta
dc.contributor.author Njoroge, E.G. (Eric)
dc.date.accessioned 2015-01-28T05:41:45Z
dc.date.available 2015-01-28T05:41:45Z
dc.date.issued 2014-12
dc.description.abstract Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonal-silicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500–1,000 °C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru2Si3) at 800 °C, while diffusion of Ru into 6H-SiC commenced at 800 °C. Raman analysis of the thin films annealed at 1,000 °C showed clear D and G carbon peaks which was evidence of formation of graphite. At this annealing temperature, the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current–voltage characteristic, thereby, rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface. en_ZA
dc.description.embargo 2015-12-30 en_ZA
dc.description.librarian hb2015 en_ZA
dc.description.uri http://link.springer.com/journal/13538/44/6 en_ZA
dc.identifier.citation Munthali, KV, Theron, C, Auret, FD, Coelho, SMM, Prinsloo, L & Njoroge, E 2014, 'Solid state reaction of ruthenium with 6H-SiC under vacuum annealing and the impact on the electrical performance of its Schottky contact for high temperature operating SiC-based diodes', Brazilian Journal of Physics, vol. 44, no. 6, pp. 739-745. en_ZA
dc.identifier.issn 0103-9733 (print)
dc.identifier.issn 1678-4448 (online)
dc.identifier.other 10.1007/s13538-014-0257-z
dc.identifier.uri http://hdl.handle.net/2263/43456
dc.language.iso en en_ZA
dc.publisher Springer en_ZA
dc.rights © Sociedade Brasileira de Fisica 2014. The original publication is available at : http://link.springer.com/journal/13538/44/6 en_ZA
dc.subject Rutherford backscattering spectrometry en_ZA
dc.subject Raman spectroscopy en_ZA
dc.subject Graphite en_ZA
dc.subject Ruthenium silicide en_ZA
dc.subject 6H-SiC en_ZA
dc.subject D and G carbon peaks en_ZA
dc.subject Schottky contacts en_ZA
dc.subject Ruthenium (Ru) en_ZA
dc.title Solid state reaction of ruthenium with 6H-SiC under vacuum annealing and the impact on the electrical performance of its Schottky contact for high temperature operating SiC-based diodes en_ZA
dc.type Postprint Article en_ZA


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