Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure

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dc.contributor.author Coelho, Sergio M.M.
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Janse van Rensburg, P.J. (Pieter Johan)
dc.contributor.author Nel, Jackie M. (Jacqueline Margot)
dc.date.accessioned 2014-06-06T06:21:41Z
dc.date.available 2014-06-06T06:21:41Z
dc.date.issued 2013
dc.description.abstract Schottky barrier diodes prepared by electron beam deposition (EBD) on Sb-doped n-type Ge were characterized using deep level transient spectroscopy (DLTS). Pt EBD diodes manufactured with forming gas in the chamber had two defects, E0.28 and E0.31, which were not previously observed after EBD. By shielding the samples mechanically during EBD, superior diodes were produced with no measureable deep levels, establishing that energetic ions created in the electron beam path were responsible for the majority of defects observed in the unshielded sample. Ge samples that were first exposed to the conditions of EBD, without metal deposition (called electron beam exposure herein), introduced a number of new defects not seen after EBD with only the E-center being common to both processes. Substantial differences were noted when these DLTS spectra were compared to those obtained using diodes irradiated by MeV electrons or alpha particles indicating that very different defect creation mechanisms are at play when too little energy is available to form Frenkel pairs. These observations suggest that when EBD ions and energetic particles collide with the sample surface, inducing intrinsic non-localised lattice excitations, they modify defects deeper in the semiconductor thus rendering them observable. en_US
dc.description.librarian am2014 en_US
dc.description.sponsorship The South African National Research Foundation en_US
dc.description.uri http://jap.aip.org/ en_US
dc.identifier.citation Coelho, SMM, Auret, FD, Janse van Rensburg, PJ & Nel, JM 2013, 'Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure', Journal of Applied Physics, vol. 114, no. 17, art.173708, pp. 1-8. en_US
dc.identifier.issn 0021-8979 (print)
dc.identifier.issn 1089-7550 (online)
dc.identifier.other 10.1063/1.4828999
dc.identifier.uri http://hdl.handle.net/2263/40024
dc.language.iso en en_US
dc.publisher American Institute of Physics en_US
dc.rights © 2013 AIP Publishing LLC en_US
dc.subject n-Ge en_US
dc.subject Ge samples en_US
dc.subject Diodes en_US
dc.subject Electron beam deposition (EBD) en_US
dc.subject Deep level transient spectroscopy (DLTS) en_US
dc.title Electrical characterization of defects introduced in n-Ge during electron beam deposition or exposure en_US
dc.type Article en_US


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