Influence of radiation damage on xenon diffusion in silicon carbide

Show simple item record Friedland, Erich Karl Helmuth Gärtner, K. Hlatshwayo, Thulani Thokozani Van der Berg, Nic (Nicolaas George) Thabane, Tebello T. 2014-05-12T10:45:41Z 2014-05-12T10:45:41Z 2014-08
dc.description.abstract Diffusion of xenon in poly and single crystalline silicon carbide and the possible influence of radiation damage on it are investigated. For this purpose 360 keV xenon ions were implanted in commercial 6H-SiC and CVD-SiC wafers at room temperature, 350 °C and 600 °C. Width broadening of the implantation profiles and xenon retention during isochronal and isothermal annealing up to temperatures of 1500 °C was determined by RBS-analysis, whilst in the case of 6H-SiC damage profiles were simultaneously obtained by aparticle channelling. No diffusion or xenon loss was detected in the initially amorphized and eventually recrystallized surface layer of cold implanted 6H-SiC during annealing up to 1200 °C. Above that temperature serious erosion of the implanted surface occurred, which made any analysis impossible. No diffusion or xenon loss is detected in the hot implanted 6H-SiC samples during annealing up to 1400 °C. Radiation damage dependent grain boundary diffusion is observed at 1300 °C in CVD-SiC. en_US
dc.description.librarian hb2014 en_US
dc.description.sponsorship National Research Foundation and the Bundesministerium für Bildung und Forschung en_US
dc.description.uri en_US
dc.identifier.citation Friedland, EKH, Gärtner, K, Hlatshwayo, TT, Van der Berg, NG & Thabethe, TT 2014, 'Influence of radiation damage on xenon diffusion in silicon carbide', Nuclear Instruments and Methods in Physics Research Section B : Beam Interactions with Materials and Atoms, vol. 332, pp. 415-420. en_US
dc.identifier.issn 0168-583X (print)
dc.identifier.issn 1872-9584 (online)
dc.identifier.other 10.1016/j.nimb.2014.02.109
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights © 2014 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Nuclear Physics. A. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Physics A, vol. 332, pp. 415-420, Aug 2014. doi : 10.1016/j.nimb.2014.02.109. en_US
dc.subject Silicon carbide en_US
dc.subject Diffusion en_US
dc.subject Radiation damage en_US
dc.title Influence of radiation damage on xenon diffusion in silicon carbide en_US
dc.type Postprint Article en_US

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