Venter, Andre; Nyamhere, Cloud; Botha, J.R.; Auret, Francois Danie; Coelho, Sergio M.M.; Meyer, Walter Ernst
(American Institute of Physics, 2012-05-01)
Inductively coupled Ar plasma etching of n-type (Si doped) Gallium Arsenide (GaAs) introduces
several electron traps, Ec – 0.04 eV (labelled E10), Ec – 0.19 eV, Ec – 0.31 eV, Ec – 0.53 eV, and
Ec – 0.61 eV (behaving like ...