Coelho, Sergio M.M.; Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Nel, Jacqueline Margot(American Institute of Physics, 2013)
Schottky barrier diodes prepared by electron beam deposition (EBD) on Sb-doped n-type Ge
were characterized using deep level transient spectroscopy (DLTS). Pt EBD diodes
manufactured with forming gas in the chamber had ...
