Browsing Natural and Agricultural Sciences by Supervisor "Friedland, Erich Karl Helmuth"

Browsing Natural and Agricultural Sciences by Supervisor "Friedland, Erich Karl Helmuth"

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  • Diffusion and surface effects of SiC implanted with fission product elements 
    Kuhudzai, Remeredzai Joseph (University of Pretoria, 2015)
    The diffusion and surface effects of several fission product elements implanted in SiC have been investigated. SiC is used as the main barrier for fission products in modern high temperature gas cooled reactors. An ...
  • Diffusion of ion implanted iodine in 6H-SiC 
    Kuhudzai, Remeredzai Joseph (University of Pretoria, 2011-07-04)
    The diffusion of iodine implanted 6H-SiC has been investigated using Rutherford backscattering Spectrometry (RBS). SiC is used as the main barrier in the modern high temperature gas cooled reactors. An understanding of the ...
  • Diffusion of silver in 6H-SiC 
    Hlatshwayo, Thulani Thokozani (University of Pretoria, 2010-07-27)
    SiC is used as the main diffusion barrier in the fuel spheres of the pebble bed modular reactor (PBMR). The PBMR is a modern high temperature nuclear reactor. However, the release of silver from the fuel spheres has raised ...
  • Influence of particle irradiation on the electrical and defect properties of GaAs 
    Goodman, Stewart Alexander (University of Pretoria, 1994)
    The beginning of the space-age in the 1950s led to interest in the effects of radiation on semiconductors. The systematic investigation of defect centres in semiconductors began in earnest over 30 years ago. In addition ...
  • Investigation of the diffusion behaviour of aliminium in different semiconductors 
    Hauser, Thilo Michael (University of Pretoria, 2006-12-04)
    Please read the abstract in the section 00front of this document
  • Raman spectroscopic investigation of radiation damage in carbon implanted diamond 
    Prinsloo, Linda Charlotta (University of Pretoria, 2006-02-13)
    Analog and digital structures can be written into thin surface layers of semiconductors by using focused ion beams of submicron dimensions. By inducing the phase transition from the crystalline (c) to the amorphous state ...