Coelho, Sergio M.M.; Auret, Francois Danie; Janse van Rensburg, Pieter Johan; Nel, J.M.
(Elsevier, 2014-04)
Inductively coupled plasma (ICP) etching of germanium introduces a single defect, the E0.31 electron trap, for a
large range of argon partial pressures from 4 × 10-3 to 6.5 × 10-4mbar that correspond to ion energies of 8 ...