The thermal expansion of 3C-SiC in TRISO particles by high temperature X-ray diffraction

Show simple item record Ngoepe, Noko Nepo De Villiers, J.P.R. (Johan) 2013-11-27T08:19:07Z 2013-11-27T08:19:07Z 2013-07
dc.description.abstract The lattice parameter change of SiC in TRISO particles prepared by chemical vapour deposition (CVD) was measured using high temperature X-ray diffraction, across a temperature range of 25–1400 C. Al2O3 was used as the internal standard and the SiC temperature corrections were calibrated using its two independent lattice parameter values along the a- and c-axes. Experimental unit cell values of SiC atlow temperatures corresponded well with those published in previous literature, but deviated systematically at higher temperatures. Thermal expansion coefficients of the CVD prepared SiC shell material are considered the most accurate and follow a linear trend with increasing temperature (a11 = 2.7706 10 9 - T +3.3048 10 6 K 1). The TRISO particles are described best using non-lin ear expansion coefficients. Apparent is the deviation in the SiC lattice constants of the shell material and the TRISO particles from which it originated.This could indicate a residual strain in the TRISO particles or a difference in sample displacement between the TRISO particles and the surrounding alumina standard.The room temperature lattice constant for the shell material is 4.36030 Å(SD0.00006 Å) as compared with that of the TRISO sample of 4.35835 Å(SD0.00006 Å) after adjusting the sample displacement toget alumina lattice constants as close to the accepted values. Residual stress of 300 MPa is calculated from the lattice constant differences. en
dc.description.librarian hb2013 en
dc.description.librarian ai2014
dc.description.uri en
dc.identifier.citation Ngoepe, NN & De Villiers, JPR 2013, 'The thermal expansion of 3C-SiC in TRISO particles by high temperature X-ray diffraction', Journal of Nuclear Materials, vol. 438, no. 1-3, pp. 88-93. en
dc.identifier.issn 0022-3115 (print)
dc.identifier.issn 1873-4820 (online)
dc.identifier.other 10.1016/j.jnucmat.2012.12.047
dc.language.iso en en
dc.publisher Elsevier en
dc.rights © 2013 Elsevier B.V. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Journal of Nuclear Materials.Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Journal of Nuclear Materials, vol. 438, no.1-3, 2013. doi.: 10.1016/j.jnucmat.2012.12.047 en
dc.subject SiC en
dc.subject Thermal expansion en
dc.subject TRISO en
dc.subject X-ray diffraction en
dc.subject.lcsh Nuclear fuels -- Thermal properties en
dc.subject.lcsh Expansion (Heat) en
dc.subject.lcsh Silicon carbide -- Thermal properties en
dc.subject.lcsh X-rays -- Diffraction en
dc.title The thermal expansion of 3C-SiC in TRISO particles by high temperature X-ray diffraction en
dc.type Postprint Article en

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