Sensitivity of narrow- and wideband LNA performance to individual transistor model parameters

Show simple item record

dc.contributor.author Weststrate, Marnus
dc.contributor.author Mukherjee, Anindya
dc.contributor.author Sinha, Saurabh
dc.contributor.author Schroter, Michael
dc.date.accessioned 2013-04-17T14:03:26Z
dc.date.issued 2013
dc.description.abstract Although it is desirable for a transistor model to be as accurate as possible the extraction of model parameters from fabricated transistors is a time consuming and often costly process. An investigation of the sensitivity of LNA performance characteristics to individual parameters of the physics-based standard HBT model HICUM/L2 was therefore done to gain preliminary insight into the most important parameters for transistors used in actual circuits. This can potentially allow less strenuous accuracy requirements on some parameters which would ease the extraction process. Both a narrow- and a wideband LNA configuration were investigated. It was found that the series resistance parameters have a large impact on LNA gain, S11 and NF performance in both cases. Since the narrow band LNA relies heavily on the transistor characteristics to provide proper matching it was also very sensitive to changes in the parameters used in modelling the high frequency current gain and depletion capacitances of the transistor. en
dc.description.librarian hb2013 en
dc.description.librarian ai2013 en
dc.description.uri http://www.tandfonline.com/toc/tetn20/ en
dc.identifier.citation Weststrate, M, Mukherjee, A, Sinha, S & Schröter, M 2013, 'Sensitivity of narrow- and wideband LNA performance to individual transistor model parameters', International Journal of Electronics, vol. 100, no. 1, pp. 36-47. en
dc.identifier.issn 0020-7217 (print)
dc.identifier.issn 1362-3060 (online)
dc.identifier.other 10.1080/00207217.2012.680789
dc.identifier.uri http://hdl.handle.net/2263/21301
dc.language.iso en en
dc.publisher Taylor & Francis en
dc.rights © 2013 Taylor & Francis. This is an electronic version of an article published in International Journal of Electronics, vol.100, no. 1, pp.36-47, 2013. International Journal of Electronics is available online at : http://www.tandfonline.com/toc/tetn20. en
dc.subject Low noise amplifier en
dc.subject Inductive emitter degeneration en
dc.subject LC-ladder and capacitive feedback en
dc.subject HICUM en
dc.subject Solid-state electronics devices en
dc.subject.lcsh Transistors en
dc.subject.lcsh Low noise amplifiers en
dc.subject.lcsh Electric inductors en
dc.subject.lcsh Solid state electronics en
dc.title Sensitivity of narrow- and wideband LNA performance to individual transistor model parameters en
dc.type Postprint Article en


Files in this item

This item appears in the following Collection(s)

Show simple item record