Characterization of AIGaN-based metal - semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts

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dc.contributor.author Van Schalkwyk, Louwrens
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Nel, Jackie M. (Jacqueline Margot)
dc.contributor.author Ngoepe, P.N.M. (Phuti Ngako Mahloka)
dc.contributor.author Diale, M. (Mmantsae Moche)
dc.date.accessioned 2012-09-04T06:37:01Z
dc.date.available 2012-09-04T06:37:01Z
dc.date.issued 2012-05
dc.description.abstract Intrinsically solar-blind ultraviolet (UV) AlGaN-based Schottky photodiodes were fabricated using Iridium oxide (IrO2) as the Schottky barrier material. The Ir Schottky contacts were annealed at 700 °C under O2 ambient and the photdiodes characterized with an optoelectronic system. The main parapmeters extracted from I-V measurements were an average ideality factor of 1.38, a Schottky barrier height of 1.52 eV, a reverse leakage current density at - 1V bias of 5.2 nA/cm2 and series resistance of 250 Ω. After spectral characterization, it was found that annealing, alone, of the Ir contact to form the more UV transmissive IrO2 does not always improve the responsivity. The deposition of a Au probe contact on the IrO2 contact increased the responsivity from 40 mA/W to 52 mA/W at 275 nm with respect to the annealed Ir contact. However, the ideality factor degraded to 1.57, Schottky barrier height lowered to 1.19 eV, reverse leakage current density increased to 49 nA/cm2 and series resistance decreased to 100 Ω with the addition of the Au contact. The radiation hardness of AlGaN was also confirmed after studying the effects of 5.4 MeV He-ion irradiation using 241Am for a total fluence fo 3 x 1013 cm -2. en_US
dc.description.sponsorship The South African National Research Foundation (NRF) en_US
dc.description.uri http://www.elsevier.com/locate/physb en_US
dc.identifier.citation L. Van Schalkwyk, W.E. Meyer, F.D. Auret, J.M. Nel, P.N.M. Ngoepe & M. Diale, Characterization of AIGaN-based metal - semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts, Physica B : Condensed Matter, vol. 407, no. 10, pp. 1529-1532 (2012), doi: 10.1016/j.physb.2011.09.078. en_US
dc.identifier.issn 0921-4526 (print)
dc.identifier.issn 1873-2135 (online)
dc.identifier.other 10.1016/j.physb.2011.09.078
dc.identifier.uri http://hdl.handle.net/2263/19698
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights © 2011 Elsevier. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Physica B : Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B : Condensed Matter, vol 407, issue 10, May 2012, doi: 10.1016/j.physb.2011.09.078. en_US
dc.subject AlGaN en_US
dc.subject Solar-blind en_US
dc.subject Ultraviolet (UV) en_US
dc.subject Iridium oxide en_US
dc.subject Schottky en_US
dc.subject Photodiode en_US
dc.subject Optoelectronic en_US
dc.title Characterization of AIGaN-based metal - semiconductor solar-blind UV photodiodes with IrO2 Schottky contacts en_US
dc.type Postprint Article en_US


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