Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS

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dc.contributor.author Pienaar, J.
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Coelho, Sergio M.M.
dc.date.accessioned 2012-09-04T06:35:07Z
dc.date.available 2012-09-04T06:35:07Z
dc.date.issued 2012-05
dc.description.abstract Deep Level Transient Spectroscopy (DLTS) was used to measure the field enhanced emission rate from a defect introduced in n-type Ge. The defect was introduced through low energy (±80 eV) inductively coupled plasma (ICP) etching using Ar. The defect, named EP0.31, had an energy level 0.31 eV below the conduction band. Models of Pons and Makram-Ebeid (1979) [2] and Ganichev and Prettl (1997) [3], which describe emission due to phonon assisted tunnelling, were fitted to the observed electric field dependence of the emission rate. The model of Pons and Makram-Ebeid fitted the measured emission rate more accurately the Ganichev and Prettl. However the model of Ganichev and Prettl has only two parameters, while the model of Pons and Makram-Ebeid has four. Both models showed a trasition in the dominant emission mechanism from a weak electron-phonon coupling below 152.5 K to a strong electron –phonon coupling above 155 K. After the application of a x2 goodness of fit test, it was determined that the model of Pons and Makram-Ebeid describes the data well, while that of Ganichev and Prettl does not. en_US
dc.description.sponsorship The South African National Research Foundation en_US
dc.description.uri http://www.elsevier.com/locate/physb en_US
dc.identifier.citation J.Pienaar, W.E. Meyer, F.D. Auret & S.M.M. Coelho, Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS, Physica B : Condensed Matter, vol. 407, no. 10, pp. 1641-1644 (2012), doi: 10.1016/j.physb.2011.09.106. en_US
dc.identifier.issn 0921-4526 (print)
dc.identifier.issn 1873-2135 (online)
dc.identifier.other 10.1016/j.physb.2011.09.106
dc.identifier.uri http://hdl.handle.net/2263/19696
dc.language.iso en en_US
dc.publisher Elsevier en_US
dc.rights © 2012 Elsevier. All rights reserved. Notice : this is the author’s version of a work that was accepted for publication in Physica B : Condensed Matter. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Physica B : Condensed Matter, vol 407, issue 10, May 2012, doi: 10.1016/j.physb.2011.09.106. en_US
dc.subject Phonon assisted tunneling en_US
dc.subject Field enhanced emission en_US
dc.title Comparison of two models for phonon assisted tunneling field enhanced emission from defects in Ge measured by DLTS en_US
dc.type Postprint Article en_US


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