Field dependence of the E1' and M3' electron traps in inductively coupled Ar plasma treated n-Gallium Arsenide

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dc.contributor.author Venter, Andre
dc.contributor.author Nyamhere, Cloud
dc.contributor.author Botha, J.R.
dc.contributor.author Auret, F.D. (Francois Danie)
dc.contributor.author Coelho, Sergio M.M.
dc.contributor.author Meyer, W.E. (Walter Ernst)
dc.date.accessioned 2012-06-26T09:17:13Z
dc.date.available 2012-06-26T09:17:13Z
dc.date.issued 2012-05-01
dc.description.abstract Inductively coupled Ar plasma etching of n-type (Si doped) Gallium Arsenide (GaAs) introduces several electron traps, Ec – 0.04 eV (labelled E10), Ec – 0.19 eV, Ec – 0.31 eV, Ec – 0.53 eV, and Ec – 0.61 eV (behaving like the well documented M3 and labelled M30 in this study), of which the metastable defects Ec – 0.04eV (E10 ), and Ec – 0.07 eV are novel. Furthermore, E10 and M30 exhibit strong field enhanced carrier emission. Double-correlation deep level transient spectroscopy was used to investigate the field dependent emission behaviour of these two defects. It is shown that for both traps, the observed enhanced emission is due to phonon assisted tunnelling. The latter observation is contrary to the literature reports suggesting that enhanced carrier emission for M3 occurs via the Poole-Frenkel mechanism. en
dc.description.librarian nf2012 en
dc.description.uri http://jap.aip.org/ en_US
dc.identifier.citation Venter, A, Nyamhere, C, Botha, JR, Auret, FD, Coelho, SMM & Meyer, WE 2012, 'Field dependence of the E1' and M3' electron traps in inductively coupled Ar plasma treated n-Gallium Arsenide', Journal of Applied Physics, vol. 111, no. 9, pp. 093703-1-093703-5. [http://jap.aip.org/] en
dc.identifier.issn 0021-8979 (print)
dc.identifier.issn 1089-7550 (online)
dc.identifier.other 10.1063/1.4709390
dc.identifier.uri http://hdl.handle.net/2263/19250
dc.language.iso en en_US
dc.publisher American Institute of Physics en_US
dc.rights © 2012 American Institute of Physics en_US
dc.subject Ar plasma en
dc.subject E1' electron traps en
dc.subject M3' electron traps en
dc.subject GaAs en
dc.subject.lcsh Gallium arsenide en
dc.title Field dependence of the E1' and M3' electron traps in inductively coupled Ar plasma treated n-Gallium Arsenide en
dc.type Article en


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